The FFSB1065B-F085 is a Silicon Carbide Schottky diode designed for high-voltage, high-current applications such as automotive on-board chargers and DC-DC converters. Featuring a 650 V reverse voltage rating, 10 A continuous forward current, and excellent thermal performance, this diode offers zero reverse recovery, fast switching, and high surge capacity. Its robust design ensures system efficiency, reliability, and reduced electromagnetic interference, making it ideal for advanced power systems in EVs and hybrid vehicles, with RoHS compliance and lead-free construction for environmental safety.
Continuous Rectified Forward Current: 10 A at Tc < 146°C
Single Pulse Avalanche Energy: 49 mJ
Operating Temperature Range: -55°C to +175°C
Max Junction Temperature: 175°C
Power Dissipation: 13 W at 150°C, 79 W at 25°C
Thermal Resistance, Junction to Case: 1.9 °C/W
Forward Voltage: 1.38 V at 10 A, 25°C, up to 1.72 V at 175°C
Reverse Current: 40 μA at 25°C, 160 μA at 175°C, Vr=650V
Avalanche Rated Energy: 49 mJ
Case Type: D2PAK-3 (TO-263, 3-Lead)
Operating and Storage Temperature: -55°C to +175°C
RoHS and Pb-Free compliant, Halogen Free
Buy the ON Semiconductor Series FFSB1065B Schottky Diode: 650 V 10 A
Purchase the ON Semiconductor Series FFSB1065B Silicon Carbide Schottky Diode today for your high-voltage power applications. With a 650 V reverse voltage and 10 A continuous forward current, this diode offers fast switching, excellent thermal management, and high surge capacity. Its robust design enhances efficiency and system reliability, making it suitable for automotive, industrial, and energy conversion systems. Buy online now and benefit from high-quality, RoHS-compliant components that meet environmental standards and support innovative power solutions.
Order your ON Semiconductor Series FFSB1065B 650 V high-voltage Schottky diode today and ensure reliable, efficient power conversion for automotive and industrial projects.
Frequently Asked Questions
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