The FQA55N25 is an N-channel enhancement-mode power MOSFET manufactured using planar stripe and DMOS technology. It features reduced ON-state resistance, superior switching performance, and high avalanche energy capability. This MOSFET is suitable for applications such as switched-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. It is 100% avalanche tested, has a typical gate charge of 140nC, and a typical gate-source capacitance (Crss) of 125pF. Designed for demanding power switching applications, this device ensures high efficiency and reliable operation.
Drain Current - Continuous: 55 A at 25°C, 348 A at 100°C
Drain Current - Pulsed: 220 A
Gate-Source Voltage: +30 V
Single Pulsed Avalanche Energy: 1000 mJ
Power Dissipation: 310 W at 25°C, derate 2.5 W/°C above 25°C
Operating Temperature Range: -55 to +150 °C
Thermal Resistance Junction-to-Case: 0.4 °C/W
Thermal Resistance Case-to-Sink: 0.24 °C/W
Junction-to-Ambient: Max 40 °C/W
Gate Charge (Qg): 140 nC (typical)
Gate-Source Capacitance (Ciss): 4800 - 6250 pF
Drain-Source Diode Forward Voltage: 1.5 V at 55 A
Maximum Lead Soldering Temperature: 300°C for 5 sec
Package: TO-3PN
Buy the Buy ON Semiconductor FQA55N25 Part Number FQA55N25 Online
Secure your ON Semiconductor FQA55N25 power MOSFET online today. Designed for high voltage and high current switching, it ensures superior performance with low gate charge and high avalanche energy. Ideal for switched-mode power supplies, active PFC, and electronic ballasts. This device features a voltage rating of 250 V, continuous drain current of 55 A at 25°C, pulsed current of 220 A, and a maximum power dissipation of 310 W. Buy now for reliable, efficient power management in demanding applications.
Order your ON Semiconductor FQA55N25 power MOSFET today and enhance your power switching efficiency with this high-current, high-voltage device.
Frequently Asked Questions
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You can download the FQA55N25 datasheet or visit the ONSEMI website for support.
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ONSEMI
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