The FJP13007TU is a high-voltage NPN silicon transistor designed for fast switching applications, including electronic ballasts, switching regulators, lighting, and power management. It features a collector-base voltage of 700V and a collector-emitter voltage of 400V, with a high collector current of 16A for pulse operations. The device offers fast turn-on and turn-off times, a maximum junction temperature of 150°C, and a dissipation capacity of 80W, making it ideal for high-speed, high-power switching in industrial systems.
ONSEMI FJP13007TU High Voltage Power Transistor Specifications:
Collector-Base Voltage: 700 V
Collector-Emitter Voltage: 400 V
Emitter-Base Voltage: 9 V
Collector Current (DC): 16 A
Collector Dissipation: 80 W
Junction Temperature: 150°C
Storage Temperature Range: -65°C to 150°C
Turn-On Time: 1.6 μs
Fall Time: Not specified
Saturation Voltage: 2.0 V at 5A collector current
Current Gain Bandwidth Product: 4 MHz
Output Capacitance: 110 pF
Package: TO-220
Maximum Power Dissipation: 80 W
Maximum Operating Temperature: 150°C
Absolute Maximum Ratings are specified at Tc = 25°C
Buy the Fairchild FJP13007TU – Reliable High Voltage Fast-Switching Transistor for Industrial Applications
Purchase the Fairchild FJP13007TU online today to ensure your electronic projects benefit from its high voltage capability and fast switching performance. This transistor is ideal for power supply design, lighting controls, and industrial automation, providing high current and excellent thermal stability. With robust ratings and reliable operation, it is essential for engineers seeking efficient, high-speed switching devices. Order now to enhance your power management systems with this industrial-grade, high-voltage transistor that delivers superior performance in demanding environments.
Buy Fairchild FJP13007TU now and experience unmatched reliability and performance in high-voltage power switching systems.
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