This high-voltage P-Channel enhancement mode power MOSFET is produced using Fairchild's proprietary planar stripe DMOS technology. It offers low on-state resistance, superior switching performance, and robust avalanche and commutation mode energy handling. Designed for efficient switching in DC/DC converters, it features a maximum drain-source voltage of -200V, continuous drain current of 11.5A at room temperature, and fast switching capabilities with low gate charge. Its high reliability and optimized characteristics make it ideal for high efficiency power applications, providing excellent thermal stability and avalanche energy absorption.
Buy the Buy Fairchild FQB12P20 Power MOSFET Part Number FQB12P20 Online
Purchase the Fairchild FQB12P20 Power MOSFET online now to leverage its high -200V drain-source voltage, low on-resistance, fast switching, and reliable avalanche energy performance. This device is ideal for high-efficiency power conversion, DC/DC conversion, and switch mode power supplies, offering excellent thermal stability and low gate charge which simplifies drive circuitry. Secure your supply chain with genuine Fairchild parts, ensuring optimal performance, durability, and compliance with RoHS standards for environmentally conscious applications.
Get Fairchild FQB12P20 today—designed for high voltage switching with fast response and robust durability in power applications.
Frequently Asked Questions
Where can I buy ONSEMI FQB12P20TM?
You can click on the BUY or RFQ button to purchase FQB12P20TM from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part FQB12P20TM?