The FQT2P25TF is a P-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe DMOS technology. It features a maximum drain-source voltage of -250 V, continuous drain current of -0.55 A, and low gate charge of 6.5 nC. The device is designed for high-efficiency switching applications such as DC/DC converters, offering low on-resistance of 4.0 Ω at Veg = -10 V, and is 100% avalanche tested for reliability under demanding conditions. Its thermal resistance and avalanche energy specifications ensure excellent performance with minimal energy loss.
Acquire the Fairchild FQT2P25TF now through our online store for reliable high-voltage power switching. This P-Channel MOSFET features low gate charge, excellent avalanche robustness, and high energy pulse handling, making it perfect for efficient DC/DC conversions and similar high-performance electronic applications. Its robust specifications, including -250 V drain-source voltage and low on-resistance, ensure durability and optimal operation for demanding environments. Buy online today and enhance your electronic projects with trusted quality.
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You can download the FQT2P25TF datasheet or visit the ONSEMI website for support.
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