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ONSEMI H11AV1M 6-Pin DIP Phototransistor Optocoupler
The ONSEMI H11AV1M and H11AV1AM are general-purpose optocouplers housed in a 6-pin dual in-line package. These devices consist of a gallium arsenide infrared emitting diode that drives a silicon phototransistor. They are suitable for applications requiring electrical isolation, such as power supply regulators and digital logic inputs. The H11AV1M and H11AV1AM feature 0.3” and 0.4” input-output lead spacing respectively, and meet stringent safety and regulatory standards, including UL1577 and DIN-EN/IEC60747-5-5. Proper protective circuits are essential to ensure compliance with safety ratings.
ONSEMI H11AV1M 6-Pin DIP Phototransistor Optocoupler Specifications:
- Input Forward Voltage: 0.80 - 1.50 V
- Reverse Leakage Current: ≤ 10 µA
- Collector-to-Emitter Breakdown Voltage: 70 - 100 V
- Maximum Working Insulation Voltage: 850 V peak
- Highest Allowable Over-Voltage: 6000 V peak
- External Creepage: ≥ 7 mm
- External Clearance: ≥ 7 mm
- Distance Through Insulation: ≥ 0.5 mm
- Case Temperature: ≤ 175 °C
- Input Current: ≤ 350 mA
- Output Power: ≤ 800 mW
- Insulation Resistance: > 10⁹ Ω
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Frequently Asked Questions
Where can I buy ONSEMI H11AV1M?
You can click on the BUY or RFQ button to purchase H11AV1M from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part H11AV1M?
You can download the H11AV1M datasheet or visit the ONSEMI website for support.
Who is the manufacturer of H11AV1M?
ONSEMI