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ONSEMI FGAF40N60UFTU High-Speed Power IGBT

The FGAF40N60UFTU is a high-speed switching PT IGBT designed for efficient power management in electronics. It features low conduction and switching losses, low saturation voltage of 2.3V at 20A, high input impedance, and a collector-emitter voltage of 600V. Suitable for inverters, motor drives, and PFC circuits, this device offers reliable performance with a maximum junction temperature of +150°C and power dissipation of 100W at 25°C. Its robust construction ensures durability for demanding industrial and consumer applications, enabling energy-efficient switching and high reliability.

Authorized Distributors
Source:Newark
Part No:FGAF40N60UFTU
Stock:253
Inv Date:06-11-2026
Price: Unit price: $2.73
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Source:DigiKey
Part No:FGAF40N60UFTU
Stock:139
Inv Date:06-11-2026
Price: Unit price: $4.49
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Source:DigiKey
Part No:FGAF40N60UFTU
Stock:2156
Inv Date:06-11-2026
Price: Unit price: $2.1
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Part No:FGAF40N60UFTU
Stock:374
Inv Date:06-12-2026
Price: Unit price: $4.49
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Part No:FGAF40N60UFTU
Stock:0
Inv Date:06-11-2026
Price: Unit price: $1.71
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ONSEMI FGAF40N60UFTU High-Speed Power IGBT Specifications:

  • Collector-Emitter Voltage: 600 V
  • Gate-Emitter Voltage: +20 V
  • Collector Current at Tc=25°C: 40 A
  • Collector Current at Tc=100°C: 20 A
  • Pulsed Collector Current: 160 A
  • Maximum Power Dissipation at Tc=25°C: 100 W
  • Maximum Power Dissipation at Tc=100°C: 40 W
  • Operating Junction Temperature: -55 to +150 °C
  • Storage Temperature Range: -55 to +150 °C
  • Maximum Lead Temperature for Soldering (1/8” for 5 sec): 300 °C
  • Thermal Resistance, Junction-to-Case: 1.2 °C/W
  • Thermal Resistance, Junction-to-Ambient: 40 °C/W
  • Breakdown Voltage: 600 V
  • Gate Threshold Voltage: 35-65 V
  • Collector to Emitter Saturation Voltage: 3.4 V at 40 A
  • Input Capacitance: 1075 pF
  • Output Capacitance: 170 pF
  • Switching Delay Time: 15-30 ns
  • Fall Time: 30-37 ns
  • Total Switching Loss: 600-810 μJ
  • Gate Charge: 77-150 nC
  • Collector-Emitter Safe Operating Area: Varies with voltage and current
  • Package: TO-3PF

Buy the Fairchild Series UF 600 V PT IGBT: FGAF40N60UFTU

Purchase the FGAF40N60UFTU high-speed power IGBT online for efficient power switching in inverter and motor drive applications. Designed with low conduction and switching losses, it features a collector-emitter voltage of 600V and a low saturation voltage of 2.3V at 20A. Its high input impedance ensures energy-efficient operation for power management and control systems. With a maximum junction temperature of +150°C and robust thermal characteristics, this device guarantees reliable performance and long-lasting durability in demanding environments. Buy today for optimal energy performance and dependability.

Get Fairchild FGAF40N60UFTU today—built for high-speed switching, low losses, and reliable power control in industrial and consumer electronics.

Frequently Asked Questions

Where can I buy ONSEMI FGAF40N60UFTU?

You can click on the BUY or RFQ button to purchase FGAF40N60UFTU from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FGAF40N60UFTU?

You can download the FGAF40N60UFTU datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FGAF40N60UFTU?

ONSEMI

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