The KSB1015YTU is a PNP epitaxial silicon power transistor designed for low-frequency amplification applications. It features a collector-emitter voltage of -60 V, collector current of -3 A, and a power dissipation of 25 W at 25°C. The transistor offers a high DC current gain of 60 to 200, with a collector-base voltage of -60 V and an emitter-base voltage of -7 V. Its compact TO-220F package makes it ideal for power switching, audio amplification, and other high-current, low-frequency electronic circuits. Reliable and efficient, the KSB1015YTU ensures robust performance across various operating conditions.
ONSEMI KSB1015YTU Power Transistor Specifications:
Collector-Base Voltage: -60 V
Collector-Emitter Voltage: -60 V
Emitter-Base Voltage: -7 V
Collector Current (DC): -3 A
Base Current: -0.5 A
Collector Dissipation: 25 W at 25°C
Junction Temperature: 150°C
Storage Temperature: -55°C to 150°C
DC Current Gain: 60 to 200
Collector-Emitter Breakdown Voltage: 60 V
Collector Cut-off Current: 100 pA
Emitter Cut-off Current: 100 pA
Saturation Voltage (V_CE(sat)): -0.5 V
Base-Emitter ON Voltage: -0.7 V
Gain Bandwidth Product: 9 MHz
Output Capacitance: 150 pF
Power Dissipation: 25 W
Package: TO-220F
Buy the ON Semiconductor Series KSB Series Power Transistor: KSB1015YTU
Discover the reliable KSB1015YTU power transistor from ON Semiconductor. Offering a collector-emitter voltage of -60 V, collector current of -3 A, and a dissipation of 25 W, it is perfect for low-frequency amplification and power switching applications. Its high DC gain of 60 to 200 ensures efficient performance. Packaged in a TO-220F form factor, this transistor guarantees durability and ease of installation. Purchase online today for robust and dependable power management in your electronic projects, ensuring optimal performance and longevity.
Order your ON Semiconductor Series KSB1015YTU power transistor today and give your high-current projects the dependable and efficient performance they deserve.
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