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ONSEMI MJD200T4G Power Transistor

The MJD200T4G is a high-gain, surface-mount NPN power transistor designed for low voltage, low-power audio amplifier applications. Featuring high DC current gain, low collector-emitter saturation voltage, and an annular construction for low leakage, it is ideal for automotive and industrial uses. Compliant with UL 94 V-0 at 0.125 inches and RoHS standards, this device supports demanding environments with a maximum collector-emitter voltage of 25V and continuous collector current of 5A. Its thermally efficient DPAK package ensures reliable operation across a wide temperature range.

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Source:Newark
Part No:MJD200T4G
Stock:1401
Inv Date:06-10-2026
Price: Unit price: $0.762
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Source:Newark
Part No:MJD200T4G.
Stock:7500
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Price: Unit price: $0.2
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Source:DigiKey
Part No:MJD200T4G
Stock:33367
Inv Date:06-10-2026
Price: Unit price: $0.96
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Part No:MJD200T4G
Stock:2172
Inv Date:06-11-2026
Price: Unit price: $0.96
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Part No:MJD200T4G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.2085
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Part No:MJD200T4G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.2085
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Part No:MJD200T4G
Stock:2500
Inv Date:06-10-2026
Price: Unit price: $0.18
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Part No:MJD200T4G
Stock:4299
Inv Date:06-11-2026
Price: N/A
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ONSEMI MJD200T4G Power Transistor Specifications:

  • Package: DPAK CASE 369C
  • Maximum Collector-Base Voltage: 40 V
  • Maximum Collector-Emitter Voltage: 25 V
  • Maximum Emitter-Base Voltage: 8 V
  • Collector Current - Continuous: 5 A
  • Collector Current - Peak: 10 A
  • Base Current: 1 A
  • Total Power Dissipation @ 25°C: 12.5 W
  • Thermal Resistance, Junction-to-Case: 10 °C/W
  • Thermal Resistance, Junction-to-Ambient: 89.3 °C/W
  • Operating Temperature Range: -65°C to +150°C
  • Storage Temperature Range: -65°C to +150°C
  • Meeting UL 94 V-0 @ 0.125 in, RoHS compliant, Pb-Free, AEC-Q101 Qualified
  • Lead Formed for Surface Mount, epoxy insulated, annular construction for low leakage.

Buy the Buy ON Semiconductor Power Transistor Part Number MJD200T4G Online

Enhance your electronic assemblies by ordering the ON Semiconductor Power Transistor MJD200T4G online. Designed for low voltage, high-gain applications, this surface-mount NPN transistor features excellent thermal characteristics, low leakage current, and robust construction compliant with UL 94 V-0 and RoHS standards. Ideal for automotive and industrial environments, it offers maximum collector-emitter voltage of 25V, continuous collector current of 5A, and peak current of 10A. Purchase now for dependable, efficient performance in your electronic projects and manufacturing processes.

Order your ON Semiconductor Power Transistor MJD200T4G today and ensure reliable performance in your low-voltage audio or industrial projects.

Frequently Asked Questions

Where can I buy ONSEMI MJD200T4G?

You can click on the BUY or RFQ button to purchase MJD200T4G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MJD200T4G?

You can download the MJD200T4G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MJD200T4G?

ONSEMI

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