Dual Schottky Barrier Diode designed for UHF mixer applications, detector, and ultra-fast switching circuits. Features include very low capacitance less than 1.0 pF at 0 V, low forward voltage of approximately 0.5 V @ 10 mA, and compliance with AEC, RoHS, and halogen-free standards. Suitable for automotive and electronic applications requiring high-speed switching with minimal leakage, high reliability, and robust thermal performance. Packaged in SOT-323, these devices offer excellent electrical characteristics for demanding RF and switching circuit environments.
Total Device Dissipation on FR-5 Board: 200 mW at 25°C
Junction-to-Ambient Thermal Resistance: 625°C/W
Junction-to-Ambient Thermal Resistance on Alumina Substrate: 417°C/W
Operating Temperature Range: -55°C to +150°C
Package: SOT-323, Pb-Free and Halogen-Free
Dimensions: 0.65 x 0.65 x 0.025 inches (16.51 x 16.51 x 0.635 mm)
Buy the ON Semiconductor Series Schottky Diode: MMBD352WT1G
Order the ON Semiconductor MMBD352WT1G Schottky Diode online now to ensure high-speed, reliable performance in your RF, detector, and switching circuits. Engineered for low capacitance and fast response, these diodes are ideal for automotive, high-frequency, and ultra-fast electronic applications. Featuring robust thermal stability, low forward voltage, and compliance with environmentally friendly standards, they deliver exceptional quality and durability. Purchase today for seamless integration into your RF and switching systems, backed by industry-leading design and manufacturing excellence.
Get ON Semiconductor MMBD352WT1G today—built for ultra-fast switching and RF applications.
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