ONSEMI NCV57001DWR2G High Current Isolated Gate Driver
The NCV57001 is a high-current, isolated IGBT gate driver designed for high power applications, offering galvanic isolation, active Miller clamp, DESAT protection, and soft turn-off features. It supports both 3.3 V and 5 V input signals, with wide bias voltage range including negative voltages, and provides > 5 kVrms galvanic isolation with 1200 V working voltage. Packaged in SOIC-16, it ensures safety insulation with an 8 mm creepage distance, making it ideal for automotive, EV powertrains, and high-efficiency power supplies.
ONSEMI NCV57001DWR2G High Current Isolated Gate Driver Specifications:
Supply Voltage: Vpp1-GND1 5.5 V to 6 V, Vpp2-GND2 24 V to 25 V, Vee2-GND2 -10 V to 0.3 V
Output Current: +4/-6 A at Miller Plateau Voltages
Isolation Voltage: Input to Output > 5 kVrms, Working Voltage > 1200 V
Gate Drive: Sourcing/Sinking Current Max 78 A / 7 A, Clamping Voltage: 1.3 V to 16 V depending on conditions
DESAT Threshold Voltage: 85 V to 95 V, Negative Voltage Capability: down to -9 V
Propagation Delay: 40 to 90 ns, Rise/Fall Time: 10 to 15 ns
Operating Temperature Range: -40°C to 125°C, Storage -65°C to 150°C
Maximum Junction Temperature: 150°C, Power Dissipation: 1400 mW
Package: SOIC-16 WB with 8 mm creepage distance, Lead Reflow Soldering up to 260°C
Buy the Buy ON Semiconductor NCV57001DWR2G Isolated High Current IGBT Gate Driver Online
Order the ON Semiconductor NCV57001DWR2G today and enhance your high power electronic systems with a reliable, high-current, galvanically isolated gate driver. This device offers advanced features including DESAT protection, active Miller clamp, and support for both 3.3 V and 5 V input signals, ensuring optimal performance and safety in electric vehicles, industrial power supplies, and automation systems. Packaged in a robust SOIC-16 form factor with 8 mm creepage distance, it guarantees high insulation integrity with UL1577 and VDE standards, facilitating safe and efficient high-voltage switching applications.
Get ON Semiconductor NCV57001DWR2G today—designed for high efficiency, galvanic isolation, and reliable IGBT switching in demanding power systems.
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