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ONSEMI NTB110N65S3HF High Voltage Power MOSFET

The NTB110N65S3HF is a high-voltage N-channel power MOSFET designed for industrial and power supply applications. Featuring a 650V drain-source voltage and 30A continuous current rating, it utilizes advanced charge balance technology for low on-resistance and gate charge. Its robust construction ensures reliable performance in industrial power supplies, telecom, and inverter systems, offering high avalanche energy, low gate charge, and excellent thermal characteristics. The device is RoHS compliant, Pb-Free, and suitable for high-reliability power management solutions requiring efficient switching and minimal conduction loss.

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Source:Newark
Part No:NTB110N65S3HF
Stock:773
Inv Date:06-10-2026
Price: Unit price: $7.51
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Stock:796
Inv Date:06-11-2026
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Inv Date:06-11-2026
Price: Unit price: $6.3
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Part No:NTB110N65S3HF
Stock:0
Inv Date:06-11-2026
Price: Unit price: $6.3
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Source:Arrow EU
Part No:NTB110N65S3HF
Stock:800
Inv Date:06-11-2026
Price: N/A
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ONSEMI NTB110N65S3HF High Voltage Power MOSFET Specifications:

  • Drain-Source Voltage: 650 V
  • Gate-Source Voltage (DC): -430 V to 430 V
  • Continuous Drain Current (Tc=25°C): 30 A
  • Continuous Drain Current (Tc=100°C): 195 A
  • Pulsed Drain Current: 69 A
  • Single Pulsed Avalanche Energy: 380 mJ
  • Avalanche Current: 44 A
  • Repetitive Avalanche Energy: 24 mJ
  • Power Dissipation: 240 W at 25°C
  • Operating and Storage Temperature Range: -55°C to +150°C
  • Thermal Resistance, Junction to Case: 0.52 °C/W
  • Thermal Resistance, Junction to Ambient: Max 45 °C/W
  • Package: D2PAK (TO-263) 3-Lead
  • Gate Threshold Voltage: 3.0V to 5.0V
  • Static Drain-Source Resistance (Rds(on)): Typ. 98 mΩ
  • Gate Charge at 10V (Qg): Approx. 62 nC
  • Output Capacitance (Coss): Typ. 522 pF
  • Breakdown Voltage (Vbpss): 650V to 700V depending on temperature
  • Maximum Soldering Temperature: 300°C for 5 seconds

Buy the Buy ON Semiconductor NTB110N65S3HF Part Number 650V Power MOSFET Online

Purchase the ON Semiconductor NTB110N65S3HF online for high-performance power switching. With a drain-source voltage of 650V, 30A current capacity, and low gate charge, this MOSFET is ideal for industrial, telecom, and inverter applications. Its advanced SJ technology ensures low on-resistance and superior switching capability, reducing conduction loss and enhancing system efficiency. The device is RoHS compliant, Pb-Free, and thermally robust, making it perfect for high-reliability, high-voltage power management solutions requiring consistent performance and durability.

Get ON Semiconductor NTB110N65S3HF today—built for high voltage, low gate charge, and reliable industrial power switching.

Frequently Asked Questions

Where can I buy ONSEMI NTB110N65S3HF?

You can click on the BUY or RFQ button to purchase NTB110N65S3HF from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part NTB110N65S3HF?

You can download the NTB110N65S3HF datasheet or visit the ONSEMI website for support.

Who is the manufacturer of NTB110N65S3HF?

ONSEMI

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