The NTMFSOD6NO3C is an N-channel power MOSFET in a compact SO8-FL package, designed for high efficiency and thermal conduction. It supports a drain-to-source voltage of 30 V and continuous drain current of 433 A at 25°C, making it suitable for motor drive, power load switching, and battery management applications. Features include ultra-low Rds(on), Pb-Free, Halogen Free, RoHS compliance, and excellent thermal performance. It offers low gate charge, fast switching, and reliable avalanche energy handling, ideal for industrial and electronic control systems.
Drain-to-Source On Resistance: 0.52 mΩ at 10 V, 0.72 mΩ at 4-5 V
Forward Transconductance: 150 S
Gate Resistance: 0.4 Ω
Input Capacitance: 10500 pF
Output Capacitance: 5740 pF
Reverse Transfer Capacitance: 16.1 pF
Total Gate Charge: 65 nC
Switching Rise Time: 12 ns, Fall Time: 19 ns
Drain-to-Source Diode Voltage: 0.75-1.2 V
Reverse Recovery Time: 97 ns
Operating Junction Temperature Range: -55°C to +175°C
Lead Temperature (soldering): 260°C for 10s
Buy the ON Semiconductor NTMFS0D6NO3C – Reliable Power MOSFET for Industrial Applications
Invest in the ON Semiconductor NTMFS0D6NO3C power MOSFET today for robust, efficient power switching in industrial, motor drive, and battery management systems. Featuring ultra-low Rds(on), high drain current capacity, and excellent thermal conduction, this device ensures optimal performance and durability. Its compact SO8-FL package makes it ideal for space-constrained applications. Whether upgrading existing systems or designing new electronics, this MOSFET offers precision, reliability, and energy efficiency. Purchase online now to streamline your electronic projects.
Get ON Semiconductor NTMFS0D6NO3C today—built for high efficiency, fast switching, and reliable power control in industrial systems.
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