The NTMFS4833NT1G is an N-channel Power MOSFET designed for efficient power management. It features a drain-source voltage of 30V and a continuous drain current of 26A. Perfect for CPU power delivery, DC-DC converters, and low-side switching, it offers low RDS(on), minimal conduction and driver losses, and optimized gate charge for reduced switching losses. Its high junction temperature range from -55°C to 150°C makes it suitable for diverse industrial, consumer, and computer peripheral applications requiring reliable, high-performance switching solutions.
Drain-to-Source On Resistance: 13-23 mΩ depending on Vgs and Id
Total Gate Charge: 39-58 nC
Operating Junction Temperature: -55°C to 150°C
Body Diode Forward Voltage: 0.68 V at 30A
Package: SO-8FL
Package Dimensions: Length 4.530 mm, Width 4.560 mm, Exposed Pad for heat dissipation, Lead Pitch 1.27 mm
Lead Temperature for Soldering: 260°C for 10 seconds
Buy the Buy ON Semiconductor NTMFS4833NT1G Power MOSFET Part Number NTMFS4833NT1G Online
Purchase the ON Semiconductor Power MOSFET designed for efficient power management in various applications. This device features a maximum drain-source voltage of 30V and continuous drain current of 26A, ensuring reliable performance. Its low RDS(on) minimizes conduction losses, while optimized gate charge reduces switching energy. Suitable for CPU power delivery, DC-DC converters, and low-side switching, it operates efficiently within a temperature range from -55°C to 150°C, making it essential for high-performance industrial, computing, and consumer equipment.
Buy ON Semiconductor NTMFS4833NT1G now and experience unmatched reliability and high-efficiency power switching for industrial and computing applications.
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