ONSEMI NVH4L160N120SC1 Silicon Carbide Power MOSFET
The NVH4L160N120SC1 is a high-voltage N-channel SiC power MOSFET designed for efficient power switching in automotive and industrial applications. With a drain-to-source voltage of 1200 V and low ON-resistance of 224 mΩ at 20 V, it features ultra-low gate charge of 34 nC for high-speed switching. Suitable for ON board chargers and EV/HEV DC/DC converters, it is AEC-Q101 qualified, Pb-Free, RoHS compliant, and provides excellent avalanche ruggedness, thermal stability, and high current capability with a pulsed drain current of 140 A.
ONSEMI NVH4L160N120SC1 Silicon Carbide Power MOSFET Specifications:
Drain-to-Source Voltage: 1200 V
Gate-to-Source Voltage: -15/+25 V
Maximum Continuous Drain Current: 173 A at Tc < 175°C
Pulsed Drain Current: 140 A
Gate Charge: 34 nC
Output Capacitance: 45 pF
ON Resistance: 224 mΩ at 20 V
Avalanche Energy: 128 mJ
Maximum Junction Temperature: -55°C to +175°C
Package: TO247-4L
Thermal Resistance Junction-to-Ambient: 40°C/W
Thermal Resistance Junction-to-Case: 1.35°C/W
Soldering Temperature for Lead Terminals: 300°C for 5 s
Switching Losses: E_on = 10 W, E_off = 32 W
Body Diode Forward Voltage: 4 V at 6 A
Buy the ON Semiconductor Series 1600V SiC Power MOSFET: NVH4L160N120SC1
Purchase the Silicon Carbide Power MOSFET today and enhance your automotive or industrial power electronics with high-voltage, low-resistance switching. This rugged device offers 1200 V maximum drain-to-source voltage, ultra-low gate charge, and high pulsed current capacity, ensuring reliable and efficient performance. Its high junction temperature range, avalanche energy capability, and RoHS compliance make it suitable for demanding applications like EV chargers and DC/DC converters. Buy online now for fast delivery and proven power handling superior to silicon alternatives.
Order your ON Semiconductor Series 1600V SiC Power MOSFET NVH4L160N120SC1 today and give your power systems the dependable efficiency and ruggedness they deserve.
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