The NXH100B120H3Q0STG is a high-efficiency dual boost power module designed for demanding applications such as solar inverters, uninterruptible power supplies, and energy storage systems. It integrates ultra field stop trench IGBTs and SiC diodes to reduce conduction and switching losses, ensuring superior reliability. The module features optional thermal interface materials, solderable or press-fit pins, and thermistor options. Its robust design supports high voltages up to 1200 V and operates reliably within a junction temperature range of -40°C to 150°C, making it ideal for renewable energy and industrial applications.
ONSEMI NXH100B120H3Q0STG Power Module Specifications:
Maximum Collector-Emitter Voltage: 1200 V
Continuous Collector Current: 50 A at 102°C junction temperature
Pulsed Collector Current: 150 A
Maximum Power Dissipation: 186 W
Junction Operating Range: -40°C to 150°C
Isolation Test Voltage: 3000 VRMS
Creepage Distance: 12.7 mm
Gate-Emitter Voltage: ±20 V
Thermistor Resistance at 25°C: 22 kΩ
Weight: Not specified
Package: Case 180BF, options with solder or press-fit pins, with or without thermal interface material
Buy the ON Semiconductor Series QOBBOOST: Power Module: NXH100B120H3Q0STG
Enhance your energy systems with the ON Semiconductor NXH100B120H3Q0STG power module, featuring advanced IGBT and SiC diode technology for superior efficiency. Designed for renewable energy, UPS, and storage solutions, it provides robust electrical performance, high voltage capability, and reliable operation across wide temperature ranges. Its modular design with optional thermal interface material and solder or press-fit pins ensures easy installation and maintenance. Purchase online today to leverage cutting-edge power management technology to meet demanding industrial and energy needs.
Buy ON Semiconductor NXH100B120H3Q0STG power module now and experience unmatched reliability and performance in high-voltage energy applications.
Frequently Asked Questions
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