The PZTA56 is a PNP bipolar transistor designed for general-purpose amplifier applications, supporting collector currents up to 300mA. It operates within a junction temperature range of -55°C to 150°C and is suitable for power management, industrial, and switching applications. Featuring a collector-emitter voltage of -80V and a collector-base voltage of -80V, this transistor provides reliable performance in diverse electronic circuits. Its thermal characteristics include a total device dissipation of up to 1000mW and a junction-to-ambient thermal resistance of 125°C/W. Ideal for various electronics requiring efficient amplification and switching functions.
Operating and Storage Junction Temperature Range: -55°C to +150°C
Total Device Dissipation: 1000 mW
Thermal Resistance, Junction-to-Ambient: 125 °C/W
Power Dissipation: 1000 mW
Collector-Emitter Breakdown Voltage: -80 V
Collector-Base Breakdown Voltage: -80 V
Emitter-Base Breakdown Voltage: 4.0 V
Collector Cut-Off Current: -0.1 pA at -60 V
DC Current Gain: 100 at Ic = -100 mA
Saturation Voltage (Vce(sat)): 0.25 V at Ic = -100 mA
Base-Emitter On Voltage: 1.2 V at Ib = -100 mA
Gain Bandwidth Product: 50 MHz at f= 100 MHz
Buy the Buy Fairchild PZTA56 Part Number PZTA56 Online
Secure your order of the PZTA56 PNP bipolar transistor today and enjoy fast delivery and genuine quality. This versatile transistor handles collector currents up to 300mA, operates within a broad temperature range, and ensures robust amplification and switching in power management, industrial, and electronic circuits. Perfect for engineers and technicians seeking a reliable component for diverse applications, buying online simplifies procurement and guarantees authenticity, consistent performance, and easy technical support for your projects.
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Frequently Asked Questions
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You can download the PZTA56 datasheet or visit the ONSEMI website for support.
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ONSEMI
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