The QSB363 is a compact, NPN silicon phototransistor encapsulated in a black plastic T-3/4 package with a 24° medium wide beam angle. It features daylight filtering, matched emitters, and surface-mount design options including gull-wing, Yoke, and Z-Bend leads. Operating efficiently from -40°C to +85°C, it is ideal for infrared sensing applications, offering high sensitivity at 940 nm wavelength, low dark current, and breakdown voltages suitable for various electronic and optical projects. Its small size, mounting versatility, and reliable performance make it suitable for portable and space-constrained environments.
Buy the ON Semiconductor Series QSB Series Infrared Phototransistor: QSB363
Purchase the ON Semiconductor infrared phototransistor QSB363 online today to ensure high sensitivity at 940 nm, robust performance in space-constrained environments, and versatile mounting options. This compact, surface-mount device features a 24° beam angle, low dark current, and a maximum voltage of 30 V, making it ideal for detecting infrared signals in various electronic applications. Its rugged design and tape & reel packaging allow for easy integration into automatic assembly lines, guaranteeing quality, consistency, and professional reliability for your sensing requirements.
Order your ON Semiconductor Series QSB363 infrared phototransistor today and enhance your optical sensing projects with reliable, space-saving performance.
Frequently Asked Questions
Where can I buy ONSEMI QSB363?
You can click on the BUY or RFQ button to purchase QSB363 from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part QSB363?
You can download the QSB363 datasheet or visit the ONSEMI website for support.
Who is the manufacturer of QSB363?
ONSEMI
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