The STB45N60DM2AG is an automotive-grade N-channel Power MOSFET designed for high efficiency power conversion applications. It features a voltage rating of 600 V, low on-resistance of 0.085 Ω, and a continuous drain current of 34 A. The device includes a fast-recovery body diode, extremely low gate charge, and input capacitance, making it ideal for switching in high-power environments like bridge topologies and phase-shift converters. Certified for AEC-Q101 automotive standards, it provides high ruggedness and reliability in demanding automotive and industrial applications.
Avalanche current: 6 A, Single pulse energy: 800 mJ
Buy the STMicroelectronics Series DM2 Power MOSFET: STB45N60DM2AG
Purchase the STB45N60DM2AG Power MOSFET online today to ensure high efficiency and reliable switching performance in your automotive and industrial applications. This device offers a 600 V voltage rating, low Rds(on), and a proven track record of durability thanks to its automotive-grade quality and extensive testing standards. With its fast recovery diode and low gate charge, it is ideal for demanding power conversion tasks, including bridge topologies and phase-shift converters. Get your stock today and enhance your project’s power management capabilities.
Order your STMicroelectronics Series DM2 Power MOSFET STB45N60DM2AG today and give your high-power switching projects the dependable quality they deserve.
Frequently Asked Questions
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You can download the STB45N60DM2AG datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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