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STMICROELECTRONICS STF6N60M2 High-Voltage Power MOSFET

These N-channel Power MOSFETs utilize MDmesh™ M2 technology, featuring low on-resistance and optimized switching for high-efficiency converters. Designed with strip layout and improved vertical structures, they support demanding switching applications, including high-voltage environments up to 600 V. Suitable for switching power supplies, inverters, and industrial automation, these devices boast extremely low gate charge, excellent output capacitance profiles, and are 100% avalanche tested. Their rugged design ensures reliable performance, making them ideal for high-performance power switching needs in various electronic systems.

Authorized Distributors
Source:DigiKey
Part No:STF6N60M2
Stock:1644
Inv Date:06-11-2026
Price: Unit price: $2.11
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Part No:STF6N60M2
Stock:1721
Inv Date:06-12-2026
Price: Unit price: $2.11
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Part No:STF6N60M2
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.7
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Source:Arrow EU
Part No:STF6N60M2
Stock:900
Inv Date:06-12-2026
Price: N/A
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STMICROELECTRONICS STF6N60M2 High-Voltage Power MOSFET Specifications:

  • Drain-source Voltage: 600 V
  • Drain Current (continuous at Tc=25°C): 45 A
  • Drain Current (pulsed): 18 A
  • Gate-Source Voltage: ±25 V
  • Gate Threshold Voltage: 2-4 V
  • Gate Charge (Qg): 8 nC
  • Output Capacitance (Coss): 14 pF
  • Input Capacitance (Ciss): 232 pF
  • Drain Dissipation at Tc=25°C: 60 W
  • Total Dissipation (TO-220): 60 W
  • Thermal Resistance Junction-Case Max: 2.08 °C/W
  • Thermal Resistance Junction-Ambient Max: 100 °C/W
  • Insulation Voltage: 2500 V RMS
  • Avalanche Energy (starting): 88 mJ
  • Switching Times: Turn-on delay 9.5 ns, Rise time 74 ns, Turn-off delay 24 ns, Fall time 22.5 ns
  • Reverse Recovery Time: 274 ns
  • Reverse Recovery Charge (Qy): 147 μC
  • Peak Diode Recovery Voltage Slope: 15 V/ns

Buy the Buy STMicroelectronics N-channel 600 V Power MOSFET Part Number STF6N60M2 Online

Purchase the STMicroelectronics STF6N60M2 high-voltage power MOSFET online today to enhance your power conversion systems. Featuring 600 V drain-source voltage, 45 A continuous current, low gate charge, and excellent switching performance, this device is engineered for demanding industrial, automotive, and consumer electronics applications. Its robust design ensures reliable operation under high-stress conditions, while its avalanche-tested features guarantee safety. Easy to integrate into your project for improved efficiency, low heat dissipation, and long-lasting performance, making it the ideal choice for high-performance power switching needs.

Get STMicroelectronics STF6N60M2 today—built for high-performance switching, low losses, and long-lasting durability in demanding power applications.

Frequently Asked Questions

Where can I buy STMICROELECTRONICS STF6N60M2?

You can click on the BUY or RFQ button to purchase STF6N60M2 from an authorized STMICROELECTRONICS distributor.

How do I troubleshoot issues or seek technical support for part STF6N60M2?

You can download the STF6N60M2 datasheet or visit the STMICROELECTRONICS website for support.

Who is the manufacturer of STF6N60M2?

STMICROELECTRONICS

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