The STP13N60M2 is an N-channel power MOSFET utilizing MDmesh II Plus technology, which offers low gate charge, extremely low on-resistance, and high efficiency for demanding switching applications. Designed in TO-220, IPAK, and TO-247 packages, it is suitable for high-speed switching in power converters with features including avalanche ruggedness, Zener protection, and a high drain current of 11 A pulse. Its robust construction and thermal management options make it ideal for high-power industrial and automotive applications requiring reliable and efficient performance.
STMICROELECTRONICS STP13N60M2 Power MOSFET Specifications:
Vds: 600 V
Id continuous at 25°C: 1 A
Id pulsed: 44 A
Ptotal dissipation at 25°C: 110 W
Vgs: +25 V
Maximum junction temperature: 150°C
Thermal resistance junction-case: max 1.14 °C/W
Thermal resistance junction-ambient: max 50-100 °C/W depending on package
Gate charge (Qg): 17 nC
Gate threshold voltage: 2-4 V
Rds(on): 0.35 Ω typ. at Vgs=10 V, Id=5.5 A
Avalanche current: 28 A
Storage temperature: -85°C to +150°C
Package options: TO-220, IPAK, TO-247
Buy the STMicroelectronics Series MDmesh II Plus Low Qg: STP13N60M2
Purchase the STMicroelectronics STP13N60M2 today for advanced switching performance, low on-resistance, and reliable operation in power management systems. Designed with MDmesh II Plus technology, this N-channel MOSFET features extremely low gate charge and high avalanche ruggedness, making it ideal for high-efficiency converters and demanding industrial or automotive applications. Available in TO-220, IPAK, and TO-247 packages, it offers excellent thermal performance, ensuring long-term durability and safe operation within a wide temperature range. Buy online now to enhance your power circuitry with this robust component.
Get STMicroelectronics STP13N60M2 today—built for high-speed switching and long-lasting durability.
Frequently Asked Questions
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You can download the STP13N60M2 datasheet or visit the STMICROELECTRONICS website for support.
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STMICROELECTRONICS
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