This N-channel Power MOSFET features MDmesh M2 technology, offering low on-resistance and excellent switching performance. Designed in a TO-247 package, it is suitable for high-efficiency converters and demanding switching applications. With a maximum drain-source voltage of 600 V, continuous drain current of 52 A, and pulsed current of 208 A, it includes features like low gate charge, avalanche testing, and Zener protection. Its thermal and electrical ratings make it a reliable choice for power management in industrial and electronic systems.
STMICROELECTRONICS STW56N60M2 Power MOSFET Specifications:
Ves (Gate-source voltage): 425 V
Ib (Drain current, continuous at 25°C): 52 A
Ib (Drain current, continuous at 100°C): 33 A
Ipm (Pulsed drain current): 208 A
Total dissipation: 350 W at 25°C
Storage temperature: -55°C to 150°C
Max operating junction temperature: 150°C
Thermal resistance junction-ambient: 50 °C/W
Thermal resistance junction-case: 0.36 °C/W
Max avalanche pulse current: 75 A
Drain-source breakdown voltage: 600 V
On-resistance (Vgs=10 V): 0.045 to 0.055 Ω
Output capacitance: 175 pF
Gate charge: 91 nC
Switching times: Turn-on delay 18 ns, Rise time 26.5 ns, Turn-off delay 19 ns, Fall time 14 ns
Buy the Buy STMicroelectronics Power MOSFET Part Number STW56N60M2 Online
Purchase the STW56N60M2 Power MOSFET online today and enhance your electronic systems with superior switching performance, low on-resistance, and reliable thermal management. Designed for demanding high-efficiency converters and industrial applications, this TO-247 package device offers optimal electrical ratings and features such as low gate charge, avalanche testing, and Zener protection. Ensure your power management solutions are robust, efficient, and compliant by buying this high-quality MOSFET directly from authorized online distributors now.
Buy STW56N60M2 now and experience unmatched reliability and power efficiency for your high-voltage switching needs.
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