The IRLD024PBF is a third-generation N-channel enhancement-mode power MOSFET designed for efficient power management. It features fast switching capability, a ruggedized construction, and low on-resistance. The device comes in a machine-insertable package suitable for stacking in multiple configurations with standard 0.1-inch pin spacing. Its dual drain design acts as a thermal link to the mounting surface, supporting power dissipation up to 1W. Key features include a dynamic dV/dt rating, compatibility with automatic insertion, stackable end design, logic-level gate drive, and specified RDS(ON) at VGS = 4V and 5V. The operating temperature range spans from -55°C to 175°C. Common applications include industrial and power management systems.
Enhance your power systems with the Vishay Series IRLD024PBF N-channel MOSFET featuring low RDS(ON), fast switching, and a compact stackable package. Ideal for industrial applications, it offers high efficiency, rugged construction, and wide temperature range from -55°C to 175°C. With a drain-source voltage of 60V and continuous drain current of 18A, this device ensures dependable performance. Its thermal characteristics support high power dissipation up to 13W, making it suitable for power management and automation projects. Purchase online today to ensure your projects benefit from top-tier reliability and efficiency.
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You can download the IRLD024PBF datasheet or visit the Vishay website for support.
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