The N-Channel MOSFET is optimized for low-voltage switching applications, featuring a low threshold voltage of approximately 0.9 V (typ.), low on-resistance of 5 Ω, and fast switching speed of 35 ns. Designed for ease of driving switches, it supports high-speed circuits and low battery voltage operation, with a maximum drain-source voltage of 20 V and a continuous drain current up to 200 mA. Its robust construction includes 2000 V ESD protection, making it suitable for relay drivers, power supply converters, and electronic control systems, all compliant with RoHS standards.
Continuous Drain Current: 200 mA at 28°C, 110 mA at 85°C
Pulsed Drain Current: 600 mA
Maximum Power Dissipation: 125 mW (SC-75 package)
Gate Threshold Voltage: 0.4 V to 1.2 V
On-Resistance: 5 Ω typical at Vgs=4.5 V
Gate-Source Leakage: 10 nA max at Vgs= ±10 V
ESD Protection: 2000 V
Operating Junction/Storage Temperature: -55°C to 150°C
Package: SC-75 (3 leads)
Buy the Buy Vishay Si1032R Part Number SI1032RT1GE3 Online
Purchase the Vishay Si1032R N-Channel MOSFET online today and secure a high-performance component designed for low-voltage switch driving. Featuring low on-resistance of 5 Ω, fast switching speed of 35 ns, and robust ESD protection of 2000 V, it supports relay drivers, power converter circuits, and high-speed electronic applications. The device operates with a drain-source voltage of 20 V and a continuous drain current up to 200 mA, all in compliance with RoHS standards for environmentally friendly manufacturing.
Order your Vishay SeriesSI1032RT1GE3 N-Channel MOSFET today and enhance your high-speed, low-voltage switching circuits with reliable VISHAY components.
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