This dual N-channel MOSFET, rated at 20 V with high-speed switching capabilities, is ideal for load switching in portable devices and DC/DC converters. It features a low Rds(on) of 0.235 ohms at 4.5 V, a drain-source breakdown voltage of 20 V, and a continuous drain current of 1 A at 25°C. The device is RoHS compliant, halogen-free, and designed for high efficiency applications. Its small package ensures easy integration into compact circuits, offering reliable performance for modern electronics.
Maximum junction-to-ambient thermal resistance: 290 °C/W
Maximum junction-to-foot thermal resistance: 250 °C/W
Gate threshold voltage: 0.6 - 1.5 V
Drain-source on-resistance: 0.235 Ω at 4.5 V, 0.306 Ω at 2.5 V
Gate charge: 0.9 nC
Body diode voltage: 0.8 - 1.2 V
Operating junction temperature range: -55°C to +150°C
Package: SC-70
RoHS and halogen-free compliance
High-speed switching capabilities for efficient power management
Buy the Buy Vishay Siliconix MOSFET Part Number SI1902CDLT1BE3 Online
Experience the reliable performance of the Vishay Siliconix dual N-channel MOSFET SI1902CDLT1BE3. Designed for load switching and DC/DC conversion, this compact device features low Rds(on), high-speed switching, and RoHS compliance, making it ideal for portable electronics and power management applications. Its small SC-70 package allows easy integration into tight spaces while maintaining excellent thermal characteristics. Purchase online today and ensure your electronic projects benefit from top-tier efficiency, durability, and modern design features suitable for demanding high-speed switching needs.
Get Vishay Siliconix SI1902CDLT1BE3 today—built for precision, high-speed switching, and long-lasting durability in electronic circuits.
Frequently Asked Questions
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