The SI1902DL-T1-E3 is a dual N-channel MOSFET designed for small-signal applications requiring a compact package. It is suitable for switching low current loads of around 250mA, either directly or through a level shift. The device features an improved ON-resistance and enhanced thermal performance, with a maximum gate-to-source voltage of ±12V and a pulsed drain current of 1A. It is ideal for industrial and power management applications.
Package Dimensions: See datasheet outline for detailed sizes
Buy the Vishay Series Si1902 Dual N-Channel MOSFET: SI1902DL-T1-E3
Purchase the Vishay Series Si1902DL-T1-E3 dual N-channel MOSFET online today and ensure reliable low-voltage switching for your industrial, power management, or small-signal applications. This compact device offers low Rds(on), high thermal performance, and robust ratings with a maximum of 20V drain-source voltage and 1A pulsed drain current, making it ideal for efficient switching and power control in space-constrained environments. Get dependable, high-quality MOSFETs delivered quickly for your projects.
Order your Vishay Series Si1902DL-T1-E3 dual N-channel MOSFET today and give your projects the dependable quality they deserve.
Frequently Asked Questions
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You can click on the BUY or RFQ button to purchase SI1902DLT1E3 from an authorized Vishay distributor.
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