The Vishay Siliconix Si4103DY is a P-Channel 30 V (D-S) MOSFET designed for high-performance power switching in mobile, wearable, and battery-operated devices. It features low on-resistance, high current handling capabilities, and robust thermal and electrical ratings, making it ideal for load and power management applications. The device offers high efficiency, reliability, and RoHS compliance, with a compact package suitable for surface mounting in various electronic circuits requiring efficient power control and switching functions.
Vishay SI4103DYT1GE3 P-Channel Power MOSFET Specifications:
Drain-source voltage Vos -30 V
Gate-source voltage Ves + 20 V
Continuous drain current Ib -11.35 A
Pulsed drain current Ibm -80 A
Maximum power dissipation Pp 2.556 W
Operating junction temperature range Tj, Tstg -55 to +150 °C
Junction-to-ambient thermal resistance 40 °C/W
Gate threshold voltage Vgs -2 V
Gate leakage current 100 nA at Vgs = 20 V
On-state resistance Rds(on) typ. 0.0079 Ω at Vgs = -10 V
Drain-source breakdown voltage Vos -30 V
Body diode forward voltage 0.8 – 1.2 V
Body diode reverse recovery time 60 ns
Package: Si4103DY-T1-GE3, RoHS compliant
Peak soldering temperature 260°C
Buy the Vishay Series Si4103DY P-Channel 30V MOSFET: SI4103DY
Order the Vishay Si4103DY online today to enhance your power management circuits. With a maximum drain-source voltage of 30 V and low Rds(on), this P-channel MOSFET ensures high efficiency and reliability. Its compact package makes it suitable for surface-mount applications in mobile, wearable, and electronic devices, providing excellent thermal and electrical performance. Acquire this RoHS-compliant device to optimize your circuit designs and achieve long-lasting, high-performance switching solutions for demanding power applications.
Get Vishay Si4103DY today—built for efficient power switching in compact, battery-powered devices.
Frequently Asked Questions
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