The Vishay Siliconix PowerPAK 1212-8 N-Channel MOSFET provides efficient power switching with a 60 V drain-source voltage, low Rds(on), and high current capabilities, ideal for DC/DC converters, motor drives, and circuit protection. It features a trenchFET® Gen IV design for low gate charge and high efficiency, along with a leadless PowerPAK® package ensuring robust thermal performance. The device withstands operating junction temperatures from -55°C to +150°C, making it suitable for demanding industrial applications requiring reliable, high-speed switching with minimal losses.
Vishay SIS862ADNT1GE3 Power MOSFET Specifications:
Drain-source voltage: 60 V
Continuous drain current: 75.8 A at 25°C
Pulsed drain current: 100 A
Maximum power dissipation: unspecified in provided text
Operating junction temperature: -55°C to +150°C
Gate-source voltage: ±20 V
Gate threshold voltage: 1 to 25 V
On-resistance: 0.0072 to 0.0110 ohms
Body diode forward voltage: 0.76 V at 5 A
Thermal resistance junction-to-ambient: max 34°C/W
Thermal resistance junction-to-case: max 3.2°C/W
Soldering peak temperature: 260°C
Package: PowerPAK 1212-8, leadless and halogen-free
Buy the Buy Vishay Siliconix PowerPAK 1212-8 Part Number SIS862ADNT1GE3 Online
Order the Vishay Siliconix PowerPAK 1212-8 N-Channel MOSFET online today for efficient power switching with low Rds(on). This robust device handles up to 75.8 A continuous current, with a maximum drain-source voltage of 60 V, suitable for DC/DC conversion, motor drives, and circuit protection. Its leadless PowerPAK® package ensures excellent thermal performance. With a junction temperature range from -55°C to +150°C, it provides reliable operation in a wide range of industrial and high-power applications. Buy now and enhance your system's efficiency with this high-quality MOSFET.
Buy Vishay Siliconix PowerPAK 1212-8 MOSFET now and experience unmatched reliability and high-speed switching performance in your industrial applications.
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