This N-channel 30V MOSFET is designed for switch mode power supplies, personal computers, servers, telecom equipment, and VRMs. Featuring the trenchFET® Gen IV design, it offers excellent thermal performance, low on-resistance, and high current handling capabilities in a compact PowerPAK 1212-8 package. Fully tested for Rg and UIS, it is halogen-free and RoHS compliant, making it suitable for various high-frequency switching applications and efficient power management in modern electronic systems.
Operating junction temperature range: -55°C to +150°C
Body diode continuous current: 40 A
Thermal resistance junction-to-ambient: Max 33°C/W
Soldering peak temperature: 260°C
Body diode reverse recovery time: 70 ns
Gate charge: 5.3 nC
Buy the Buy Vishay Siliconix SISA04DNT1GE3 Part Number SISA04DNT1GE3 Online
Order the Vishay Siliconix SISA04DNT1GE3 N-channel MOSFET today to ensure reliable power switching with outstanding thermal performance. This device features a trenchFET® Gen IV design, low Rds(on), and high current capacity, making it ideal for switch mode power supplies, servers, telecom equipment, and VRMs. Its compact PowerPAK 1212-8 package simplifies PCB layout and thermal management, enabling cooler operation and higher current handling in a small footprint. Purchase online for fast delivery and professional-grade quality.
Get Vishay Siliconix SISA04DNT1GE3 today—designed for efficient switching and high current handling in compact power management solutions.
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