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DIODES INC. DMN31D5UFO7B N-Channel Enhancement Mode MOSFET
The DIODES INC. DMN31D5UFO-7B is an N-channel enhancement mode MOSFET optimized for minimizing on-state resistance while maintaining excellent switching performance. This makes it a strong choice for high-efficiency power management applications, general-purpose interfacing, and analog switching. The device is fully RoHS compliant and halogen-free, meeting stringent environmental standards. It's packaged in a small X2-DFN0604-3 format, ideal for space-constrained designs. For automotive applications requiring specific change control, contact Diodes Incorporated for qualified parts.
DIODES INC. DMN31D5UFO7B N-Channel Enhancement Mode MOSFET Specifications:
- BVDSS: 30V
- RDS(ON) max: 1.5Ω @ VGS= 4.5V
- ID max @ TA = +25°C: 0.41A
- RDS(ON) @ VGS= 2.5V: 2.0Ω
- ID @ VGS= 2.5V: 0.35A
- RDS(ON) @ VGS= 1.8V: 3.0Ω
- ID @ VGS= 1.8V: 0.29A
- RDS(ON) @ VGS= 1.5V: 4.5Ω
- ID @ VGS= 1.5V: 0.23A
- Package: X2-DFN0604-3
- Moisture Sensitivity: Level 1 per J-STD-020
- Weight: 0.001 grams (Approximate)
- Total Power Dissipation: 0.38W
- Thermal Resistance, Junction to Ambient: 332 °C/W
- Operating and Storage Temperature Range: -55 to +150 °C
- Gate Threshold Voltage: 0.4-1.0V
- Diode Forward Voltage: 0.6-1.0V
- Input Capacitance: 22.6pF
- Output Capacitance: 2.68pF
- Reverse Transfer Capacitance: 1.8pF
- Total Gate Charge: 0.38nC
- Gate-Source Charge: 0.05nC
- Gate-Drain Charge: 0.07nC
- Turn-On Delay Time: 3.2ns
- Turn-On Rise Time: 2.2ns
- Turn-Off Delay Time: 21ns
- Turn-Off Fall Time: 7.5ns
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Frequently Asked Questions
Where can I buy DIODES INC. DMN31D5UFO7B?
You can click on the BUY or RFQ button to purchase DMN31D5UFO7B from an authorized DIODES INC. distributor.
How do I troubleshoot issues or seek technical support for part DMN31D5UFO7B?
You can download the DMN31D5UFO7B datasheet or visit the DIODES INC. website for support.
Who is the manufacturer of DMN31D5UFO7B?
DIODES INC.