The FMMT617 is an NPN silicon power switching bipolar transistor featuring a maximum power dissipation of 625mW, supporting peak pulse currents of 12A and low saturation voltage. It exhibits excellent current gain (hFE) up to 12A, operates reliably across a wide temperature range from -55°C to 150°C, and has matte tin-plated leads for solderability. Designed for power management, DC-DC modules, and industrial applications, it complies with RoHS and is qualified to high reliability standards including AEC-Q101. Its compact SOT23 package makes it suitable for space-constrained electronics.
Purchase the Diodes FMMT617 power transistor online today. Designed for high current switching with 12A peak pulse, 625mW dissipation, and operation from -55°C to 150°C. Its compact SOT23 package with matte tin-plated leads ensures excellent solderability and space efficiency. Ideal for power management, DC-DC modules, and industrial controls, this RoHS-compliant device also meets high reliability standards including AEC-Q101. Order now for fast delivery and reliable performance in your electronic projects.
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You can download the FMMT617 datasheet or visit the DIODES INC. website for support.
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