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INFINEON IRF9952TRPBF Power MOSFET

This dual N-channel and P-channel HEXFET power MOSFET features Generation V technology, delivering ultra-low on-resistance, very low gate charge, and minimal switching losses. Designed for high efficiency and reliability, it withstands avalanche conditions and rapid dv/dt switching. Suitable for power conversion, motor control, and switching applications, its enhanced thermal characteristics enable compact designs with multiple devices on a single board. This SO-8 package is ideal for surface mount soldering, supporting fast, high-frequency switching with reduced power dissipation, ensuring optimal circuit performance and robustness in demanding environments.

Authorized Distributors
Source:Newark
Part No:IRF9952TRPBF
Stock:6270
Inv Date:05-29-2026
Price: Unit price: $1.22
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Source:DigiKey
Part No:IRF9952TRPBF
Stock:14279
Inv Date:05-29-2026
Price: Unit price: $1.48
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Part No:IRF9952TRPBF
Stock:2773
Inv Date:05-30-2026
Price: Unit price: $1.27
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Part No:IRF9952TRPBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.68
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Part No:IRF9952TRPBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.25
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Source:Arrow EU
Part No:IRF9952TRPBF
Stock:60000
Inv Date:05-30-2026
Price: N/A
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INFINEON IRF9952TRPBF Power MOSFET Specifications:

  • Drain-Source Voltage: 30 V
  • Gate-Source Voltage: ±20 V
  • Continuous Drain Current: 28 A @ 70°C, 35 A @ 25°C
  • Pulsed Drain Current: 16 A
  • Maximum Power Dissipation: 13 W
  • Avalanche Energy: 44 mJ (single pulse), 57 mJ (repetitive)
  • Thermal Resistance Junction-to-Ambient: 625 °C/W
  • Junction and Storage Temperature Range: -55°C to +150°C
  • Dimensions: Length 4.40 mm, Width 3.00 mm, Height 1.75 mm (approximate)
  • Package: SO-8, surface mount, RoHS compliant
  • Fully avalanche rated with low gate charge, optimized for fast switching
  • Enhanced thermal design for multiple device installation
  • Lead-Free and compliant with RoHS standards
  • Suitable for vapor phase, infrared, or wave soldering
  • Maximum Gate Charge: 694 nC (N-channel), 117-134 nC (P-channel)
  • On-Resistance: 0.01650 Ω (typical at 10 V Vgs)
  • Switching times: Turn-On delay 62 ns, Turn-Off delay 36 ns

Buy the Buy International HEXFET Power MOSFET Part Number IRF9952TRPBF Online

Experience high-performance power switching with the International HEXFET Power MOSFET, IRF9952TRPBF. Designed with advanced Generation V technology, it offers ultra-low on-resistance, minimal gate charge, and excellent avalanche ratings. Its compact SO-8 package supports rapid switching and thermal management ideal for power supplies, motor controls, and industrial automation. Easy to solder using vapor phase, infrared, or wave techniques, this device ensures reliable operation under demanding conditions. Order online now to optimize your designs with this robust and efficient MOSFET, engineered for long-lasting performance.

Get International HEXFET Power MOSFET IRF9952TRPBF today—built for precision, efficiency, and long-lasting durability in power switching applications.

Frequently Asked Questions

Where can I buy INFINEON IRF9952TRPBF?

You can click on the BUY or RFQ button to purchase IRF9952TRPBF from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IRF9952TRPBF?

You can download the IRF9952TRPBF datasheet or visit the INFINEON website for support.

Who is the manufacturer of IRF9952TRPBF?

INFINEON

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