The IRFP3006PbF is a high-efficiency N-channel power MOSFET designed for switch mode power supplies, uninterruptible power supplies, and high-speed power switching applications. It features a 60V drain-to-source breakdown voltage, low on-resistance of 2.1-2.5 mΩ, and robust avalanche capabilities with a single pulse avalanche energy of 320 mJ. The device offers high pulsed drain current of 1080A, high junction temperature range from -55°C to +175°C, and is RoHS compliant, making it ideal for industrial power management solutions requiring reliable and high-performance switching components.
Continuous Drain Current: 2700 A @ Tc = 25°C, 1900 A @ Tc = 100°C
Pulsed Drain Current: 1080 A
Maximum Power Dissipation: 375 W
Gate-to-Source Voltage: ±20 V
Avalanche Energy (Single Pulse): 320 mJ
Junction-to-Case Thermal Resistance: 0.4 °C/W
Junction-to-Ambient Thermal Resistance: 40 °C/W
Gate Threshold Voltage: 2.0 - 4.0 V
On-Resistance: 2.1 - 2.5 mΩ
Operating Temperature Range: -55°C to +175°C
RoHS Compliant
Package Type: TO-247AC
Buy the International IRFP3006PBF – Reliable Power MOSFET for Industrial Applications
Purchase the International IRFP3006PBF today for exceptional high-current switching performance, low Rds(on), and durable construction designed for industrial power management. This MOSFET provides reliable operation in high-speed switching circuits, uninterruptible power supplies, and hard-switched high-frequency applications. With a 60V voltage rating, low on-resistance of just 2.1-2.5 milliohms, and avalanche energy capacity of 320 millijoules, it is a dependable choice for demanding power electronics where efficiency and ruggedness are critical.
Get International IRFP3006PBF today—built for high-current, fast switching, and long-lasting durability.
Frequently Asked Questions
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