The high-speed switching series fifth generation IGBT in TRENCHSTOP™ 5 technology offers reliable performance with 650V breakdown voltage, low gate charge, and high efficiency in hard switching and resonant topologies. Qualified for automotive and industrial applications, it features a maximum junction temperature of 175°C, RoHS compliance, and is dynamically stress tested for durability. Its package pin configuration includes gate, collector, and emitter connections, making it suitable for motor drives, power supplies, and other demanding power electronics demanding fast switching speeds and high power handling.
INFINEON AIGB50N65F5ATMA1 High Speed IGBT Module Specifications:
Voltage Rating: 650 V
Maximum Collector-Emitter Voltage: 650 V
DC Collector Current: 80.0 A at 25°C, 56.0 A at 100°C
Pulsed Collector Current: 150 A
Gate-Emitter Voltage: +20 V
Transient Gate-Emitter Voltage: 430 V
Maximum Junction Temperature: 175°C
Power Dissipation: 305 W at 25°C, 152.5 W at 100°C
Thermal Resistance: Junction - Case 0.50 KW, Junction - Ambient 85 KW, Cu on PCB 40 KW
Switching Times: Turn-on delay 23 ns, Rise time 16 ns, Turn-off delay 166 ns, Fall time 13 ns
Switching Energy: Eon 0.66 mJ, Eoff 0.17 mJ
Package: PG-TO263-3
Buy the Infineon AIGB50N65F5 – Reliable High Speed IGBT for Industrial Applications
Order the Infineon AIGB50N65F5 high speed IGBT today to ensure reliable, efficient power switching in industrial and automotive applications. This fifth-generation IGBT in TRENCHSTOP™ 5 technology features a 650V breakdown voltage, low gate charge, and a maximum junction temperature of 175°C for superior durability. Its robust construction provides excellent switching performance, making it ideal for motor drives, power supplies, and resonant topologies. Purchase online now for fast delivery and superior quality designed for demanding power electronics environments.
Get Infineon AIGB50N65F5 today—built for precision and long-lasting durability in high power switching environments.
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