The Cinfineon BAR64 series consists of silicon PIN diodes designed as high-voltage RF resistors for RF attenuators and switches. These diodes operate above 1 MHz up to 6 GHz, featuring very low capacitance at zero volt reverse bias (typical 0.17 pF above 1 GHz). They exhibit low forward resistance (around 2.1 Ω at 10 mA), very low signal distortion, and are RoHS compliant with a Pb-free package. Qualified under AEC Q101, they are suitable for high-frequency, RF switching, and attenuator applications with maximum ratings of up to 150 V reverse voltage and 250 mW power dissipation.
Diode Capacitance at Vp=20V, 1 MHz: Typical 0.35 pF
Reverse Parallel Resistance at 100 MHz: 10 kΩ
Forward Resistance at 100 MHz and 10 mA: 2.1 Ω
Package Types: SOT23, SOD323, TSLP-2-19, with RoHS compliant leadless and common cathode/anode configurations
Package Outline Dimensions vary per package type but optimized for high-frequency RF use
Buy the Buy Cinfineon RF Diode Part Number BAR6404WH6327XTSA1 Online
Purchase the Cinfineon RF diode series online today and enjoy superior performance for RF switching and attenuation at frequencies up to 6 GHz. These high-voltage silicon PIN diodes feature ultra-low capacitance, low forward resistance, and low signal distortion, making them ideal for demanding RF applications. Compatible with various package types, they are RoHS compliant and qualified under strict automotive standards (AEC Q101). Secure fast delivery and reliable online support to enhance your RF circuit designs and meet your project deadlines easily.
Order your Cinfineon Series BAR6404WH6327XTSA1 RF diode today and ensure your high-frequency RF projects have dependable, low-distortion switching components.
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