The BFP420F is a high-performance, low noise NPN bipolar RF transistor with a typical transition frequency of 25 GHz, ideal for wideband applications up to 4.5 GHz. It features a collector design supporting voltages up to 4.5 V and currents up to 60 mA, making it suitable for mobile and satellite communication systems, RF frontends, and oscillators. The device comes in a compact, RoHS-compliant flat plastic package with visible leads, ensuring reliable high-frequency performance and easy integration into various RF designs.
Collector Emitter Voltage Voeo: 4.5 V (open base), 4.1 V (at -55°C)
Collector Base Voltage Vepo: 15 V
Collector Emitter Voltage Voes: 15 V
Emitter Base Voltage VeBo: 1.5 V
Collector Current Ig: Max 60 mA
Total Power Dissipation: 210 mW at 25°C
Junction Temperature Tj: Max 150°C
Storage Temperature: -55°C to 150°C
Thermal Resistance Junction to Soldering Point: 240 K/W
Transition Frequency fT: Approx. 25 GHz
Gain (Gmax): Up to 16.5 dB at 2.4 GHz
OIP3: About 28 dBm at 2.4 GHz
Package: TSFP-4-1, Pb-free, RoHS compliant
Housed in a small, thin flat plastic package with visible leads for high-frequency applications
Buy the Infineon Series RF Transistor: BFP420F
Purchase the Infineon BFP420F RF transistor online now to get high reliability, low noise performance, and wideband gain suitable for satellite, mobile, and RF frontend applications. This transistor features a 25 GHz transition frequency, supports voltages up to 4.5 V, and has a maximum collector current of 60 mA. The compact, RoHS-compliant package ensures easy integration into your RF circuitry, providing excellent high-frequency characteristics, minimal noise figure, and stable operation. Order today for reliable performance in your RF and communication projects.
Order your Infineon Series BFP420F today and enhance your RF designs with low noise, high gain performance in a compact package, ideal for wideband applications.
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