The BFP740ESD is a highly reliable, low noise wideband NPN bipolar RF transistor based on Infineon’s advanced SiGe:C technology. It supports voltages up to 4.2 V and currents of 45 mA, making it ideal for mobile and communication applications. With a typical transition frequency of approximately 45 GHz, the transistor delivers high power gain up to 10 GHz and offers excellent ESD robustness of 2kV HBM. Its compact, RoHS-compliant plastic package simplifies integration in various RF systems, including LTE, WiMAX, and satellite communications, providing excellent RF performance and protection features.
Collector emitter voltage: 4.2 V (VOGO), 4.9 V (VOE), 4.2 V (VOSH)
Collector current: 45 mA maximum
RF input power: up to 21 dBm
Transition frequency: approximately 45 GHz
Maximum gain: 25.5 dB at 2.4 GHz, 18.5 dB at 5.5 GHz
Noise figure: 0.65 dB at 2.4 GHz, 0.9 dB at 5.5 GHz
ESD robustness: 2 kV HBM
Operating temperature: -55°C to +150°C
Junction thermal resistance: 325 K/W (typical)
Power dissipation: up to 160 mW at T<98°C
Package: SOT343, RoHS compliant
Buy the Infineon Series RF Transistor: BFP740ESD
Enhance your RF designs with the low noise, high gain BFP740ESD wideband RF transistor from Infineon. Designed with advanced SiGe:C technology, it operates up to 45 GHz for superior performance in communication devices, satellite systems, and wireless applications. With excellent ESD robustness of 2kV HBM and support for voltages up to 4.2 V, this transistor provides reliable operation under demanding conditions. Its compact SOT343 package makes integration straightforward, offering high RF input power handling up to 21 dBm and low noise figures for optimized RF amplification.
Order your Infineon Series RF Transistor BFP740ESD today and experience low noise performance, high gain, and robust ESD protection in your RF applications.
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