The BFR182 is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents from 1 mA to 20 mA. It features high gain and low noise figure, making it ideal for high-frequency applications up to 8 GHz, with a noise figure of 0.9 dB at 900 MHz. The device is RoHS compliant, Pb-free, and comes in a compact SOT23 package. It has a collector-emitter voltage of 12 V and a maximum collector current of 35 mA. Suitable for wireless communication and RF electronics, it offers reliable performance in demanding environments.
Maximum junction-to-soldering point thermal resistance: 230 K/W
Transition frequency (fT): 8 GHz at Icc=15 mA
Minimum noise figure at 900 MHz: 0.9 dB (Ig=3 mA)
Maximum power gain at 900 MHz: 10 dB (Ig=10 mA)
Collector-emitter breakdown voltage (Vbr): 12 V
Collector cutoff current (Ice): 100 nA
Emitter-base cutoff current (IEB): 1 μA
DC current gain (hFE): 70 to 140
Package: SOT23
Total power dissipation: 300 mW
Storage temperature range: -65°C to 150°C
Buy the Buy Infineon BFR182 Part Number BFR182E6327HTSA1 Online
Purchase the Infineon BFR182 RF transistor online today and elevate your wireless communication and RF amplifier designs. This low noise, high-gain silicon bipolar device offers excellent performance at up to 8 GHz, with a noise figure of 0.9 dB at 900 MHz. It features a compact SOT23 package, a collector-emitter voltage of 12 V, and a maximum collector current of 35 mA. Benefit from reliable, RoHS-compliant quality for demanding high-frequency applications, delivered quickly to support your engineering projects.
Order your Infineon BFR182 RF transistor today and enhance your broadband amplifier projects with high gain and low noise performance.
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