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INFINEON BFR182E6327HTSA1 RF Transistor

The BFR182 is a low noise silicon bipolar RF transistor designed for broadband amplifiers operating at collector currents from 1 mA to 20 mA. It features high gain and low noise figure, making it ideal for high-frequency applications up to 8 GHz, with a noise figure of 0.9 dB at 900 MHz. The device is RoHS compliant, Pb-free, and comes in a compact SOT23 package. It has a collector-emitter voltage of 12 V and a maximum collector current of 35 mA. Suitable for wireless communication and RF electronics, it offers reliable performance in demanding environments.

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Source:Newark
Part No:BFR182E6327HTSA1
Stock:9719
Inv Date:05-29-2026
Price: Unit price: $0.319
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Part No:BFR182E6327HTSA1
Stock:23933
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Price: Unit price: $0.15234
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Part No:BFR182E6327HTSA1
Stock:14785
Inv Date:05-30-2026
Price: Unit price: $0.31
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Part No:BFR182E6327HTSA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.0989
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Part No:BFR182E6327HTSA1
Stock:61
Inv Date:05-30-2026
Price: N/A
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INFINEON BFR182E6327HTSA1 RF Transistor Specifications:

  • Collector-emitter voltage: 12 V
  • Collector-emitter voltage (Vces): 20 V
  • Collector-base voltage: 20 V
  • Emitter-base voltage: 2 V
  • Collector current: 35 mA
  • Base current: 4 mA
  • Total power dissipation: 250 mW at Ts < 93°C
  • Junction temperature: 150°C
  • Ambient temperature range: -65°C to 150°C
  • Maximum junction-to-soldering point thermal resistance: 230 K/W
  • Transition frequency (fT): 8 GHz at Icc=15 mA
  • Minimum noise figure at 900 MHz: 0.9 dB (Ig=3 mA)
  • Maximum power gain at 900 MHz: 10 dB (Ig=10 mA)
  • Collector-emitter breakdown voltage (Vbr): 12 V
  • Collector cutoff current (Ice): 100 nA
  • Emitter-base cutoff current (IEB): 1 μA
  • DC current gain (hFE): 70 to 140
  • Package: SOT23
  • Total power dissipation: 300 mW
  • Storage temperature range: -65°C to 150°C

Buy the Buy Infineon BFR182 Part Number BFR182E6327HTSA1 Online

Purchase the Infineon BFR182 RF transistor online today and elevate your wireless communication and RF amplifier designs. This low noise, high-gain silicon bipolar device offers excellent performance at up to 8 GHz, with a noise figure of 0.9 dB at 900 MHz. It features a compact SOT23 package, a collector-emitter voltage of 12 V, and a maximum collector current of 35 mA. Benefit from reliable, RoHS-compliant quality for demanding high-frequency applications, delivered quickly to support your engineering projects.

Order your Infineon BFR182 RF transistor today and enhance your broadband amplifier projects with high gain and low noise performance.

Frequently Asked Questions

Where can I buy INFINEON BFR182E6327HTSA1?

You can click on the BUY or RFQ button to purchase BFR182E6327HTSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part BFR182E6327HTSA1?

You can download the BFR182E6327HTSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of BFR182E6327HTSA1?

INFINEON

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