The BFS483 is a low noise silicon bipolar RF transistor designed for broadband amplifiers requiring high gain at frequencies up to 8 GHz. Suitable for low noise, high-frequency applications, it features internal galvanic isolated transistors in a RoHS-compliant, halogen-free package with visible leads. This device handles collector currents from 2 to 30 mA, with a maximum collector-emitter voltage of 12 V and power dissipation of 450 mW. It is ideal for RF and microwave amplifier stages, offering excellent noise figure and gain at 900 MHz and 1.8 GHz frequencies.
Buy the Infineon BFS483 – Reliable RF Transistor for Industrial Applications
Experience the high-performance of the Infineon BFS483 RF transistor, designed for broadband amplifiers operating up to 8 GHz. This low noise, high-gain transistor is perfect for RF and microwave applications, providing exceptional noise figure and gain at critical frequencies. With a robust package, RoHS compliance, and easy reel packing, it ensures efficient manufacturing and reliable operation in demanding environments. Upgrade your projects with this premium RF device to achieve superior signal amplification and stability. Buy online now for fast delivery and trusted quality.
Order your Infineon BFS483 RF transistor today and enhance your broadband amplifier designs with a low noise, high-gain device suitable for demanding RF and microwave projects.
Frequently Asked Questions
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