The IRFH7914PbF is a HEXFET® Power MOSFET designed for high efficiency power control in electronic circuits. It features a low gate charge and very low Rds(on) for optimal performance in switching applications, including sync-buck converters and isolated DC-DC power supplies. Packaged in a compact PQFN 5x6 mm package, it offers excellent thermal performance, high avalanche voltage, and current capabilities. The device is lead-free, RoHS compliant, and fully characterized for avalanche voltage and current, ensuring reliable operation in demanding environments.
INFINEON IRFH7914TRPBF Power MOSFET Specifications:
Drain-to-Source Voltage: 30 V
Gate-to-Source Voltage: ±20 V
Continuous Drain Current at 25°C: 15 A
Continuous Drain Current at 70°C: 12 A
Power Dissipation at 25°C: 34 W
Power Dissipation at 70°C: 20 W
Junction Temperature Range: -55°C to +150°C
Junction-to-Case Thermal Resistance: 72 °C/W
Junction-to-Air Thermal Resistance: 40 °C/W
Rds(on): 7.5 to 87 mΩ (typical 7.5 mΩ at 4.5 V, 11 A)
Gate Threshold Voltage: 1.35 to 2.35 V
Gate Charge (Qg): 83 nC
Avalanche Energy: 7 mJ (single pulse)
Body Diode Forward Voltage: 10 V at 11 A
Storage Temperature Range: -55°C to +150°C
Buy the International Series IRFH7914 Power MOSFET: IRFH7914TRPBF
Discover the advanced power control capabilities of the International IRFH7914TRPBF HEXFET MOSFET. Offering low Rds(on), low gate charge, and high avalanche voltage, it is ideal for high-efficiency switching power supplies, sync-buck converters, and DC-DC applications. Packaged in a compact PQFN 5x6 mm form factor, it ensures excellent thermal performance, RoHS compliance, and lead-free construction. Whether designing for high-current or high-voltage environments, this robust power MOSFET provides reliable operation, simplified heat dissipation, and ease of integration—making it a perfect choice for your electronic projects.
Buy International IRFH7914TRPBF now and experience unmatched reliability and performance in efficient power switching applications.
Frequently Asked Questions
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