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INFINEON FF200R12KE3HOSA1 High-Voltage IGBT Module

The FF200R12KE3 is a highly rated IGBT module designed for inverter and switching applications. It features a collector-emitter voltage of 1200 V, continuous collector current of 200 A, and a peak collector current of 400 A. Its thermal resistance junction to case is 0.12 K/W, ensuring efficient heat dissipation. The module also includes a diode with a repetitive peak reverse voltage of 1200 V and continuous forward current of 200 A, making it ideal for high-power inverter systems in industrial and automation environments. Its robust construction ensures high reliability and fast switching times essential for modern power conversion systems.

Authorized Distributors
Source:Newark
Part No:FF200R12KE3HOSA1
Stock:27
Inv Date:05-29-2026
Price: Unit price: $137.12
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Source:DigiKey
Part No:FF200R12KE3HOSA1
Stock:38
Inv Date:05-29-2026
Price: Unit price: $133.64
Buy/RFQ:
Part No:FF200R12KE3HOSA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $97.78
Buy/RFQ:

INFINEON FF200R12KE3HOSA1 High-Voltage IGBT Module Specifications:

  • Collector-Emitter Voltage: 1200 V
  • Continuous DC Collector Current: 200 A
  • Repetitive Peak Collector Current: 400 A
  • Total Power Dissipation: 1050 W at 25°C
  • Gate-Emitter Peak Voltage: +120 V
  • Collector-Emitter Saturation Voltage: 2.15 V at 200 A
  • Gate Threshold Voltage: 5 V
  • Gate Charge: 1.90 μC
  • Internal Gate Resistance: 3.8 Ω
  • Input Capacitance: 140 nF
  • Reverse Transfer Capacitance: 0.50 nF
  • Collector-Emitter Leakage Current: 5.0 mA at 1200 V
  • Gate-Emitter Leakage Current: 400 nA at 20 V
  • Switching Times: Turn-on delay 0.30 μs, Turn-off delay 0.65 μs
  • Thermal Resistance, junction to case: 0.12 K/W
  • Isolation Test Voltage: 25 kV RMS
  • Module Dimensions: mounting depth min 7 mm, max 10 mm, with isolation and creepage distances specified
  • Storage Temperature: -40°C to 125°C
  • Operating Temperature: -40°C to 125°C
  • Weight: 340 g

Buy the Infineon Series FF200R12KE3 High-Voltage IGBT Module: FF200R12KE3

Purchase the Infineon FF200R12KE3 online today to ensure your inverter and power switching systems operate with unmatched reliability. Crafted for industrial environments, this high-voltage IGBT module handles up to 1200 V and 200 A continuous current, delivering fast switching, low power loss, and durable performance. Its robust construction includes integrated diode features, excellent thermal management, and precise electrical specifications, making it ideal for demanding applications like industrial automation, renewable energy systems, and motor drives. Order now and enhance your power conversion systems with proven quality and efficiency.

Get Infineon FF200R12KE3 today—built for high-power inverter applications with superior thermal and electrical performance.

Frequently Asked Questions

Where can I buy INFINEON FF200R12KE3HOSA1?

You can click on the BUY or RFQ button to purchase FF200R12KE3HOSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part FF200R12KE3HOSA1?

You can download the FF200R12KE3HOSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of FF200R12KE3HOSA1?

INFINEON

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