The FF200R12KE3 is a highly rated IGBT module designed for inverter and switching applications. It features a collector-emitter voltage of 1200 V, continuous collector current of 200 A, and a peak collector current of 400 A. Its thermal resistance junction to case is 0.12 K/W, ensuring efficient heat dissipation. The module also includes a diode with a repetitive peak reverse voltage of 1200 V and continuous forward current of 200 A, making it ideal for high-power inverter systems in industrial and automation environments. Its robust construction ensures high reliability and fast switching times essential for modern power conversion systems.
Module Dimensions: mounting depth min 7 mm, max 10 mm, with isolation and creepage distances specified
Storage Temperature: -40°C to 125°C
Operating Temperature: -40°C to 125°C
Weight: 340 g
Buy the Infineon Series FF200R12KE3 High-Voltage IGBT Module: FF200R12KE3
Purchase the Infineon FF200R12KE3 online today to ensure your inverter and power switching systems operate with unmatched reliability. Crafted for industrial environments, this high-voltage IGBT module handles up to 1200 V and 200 A continuous current, delivering fast switching, low power loss, and durable performance. Its robust construction includes integrated diode features, excellent thermal management, and precise electrical specifications, making it ideal for demanding applications like industrial automation, renewable energy systems, and motor drives. Order now and enhance your power conversion systems with proven quality and efficiency.
Get Infineon FF200R12KE3 today—built for high-power inverter applications with superior thermal and electrical performance.
Frequently Asked Questions
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