This 600V CoolGaN enhancement-mode power transistor offers ultra-fast switching, low gate charge, and capability for reverse conduction, making it ideal for efficient SMPS and high-density chargers. Its ruggedness meets JEDEC standards, ensuring reliable industrial applications. Designed for half-bridge topologies such as Totem pole PFC, LLC, and flyback, it improves system efficiency, power density, and reduces EMI. Its features include a normally OFF switch, low output charge, and high-frequency operation, providing superior performance in compact and demanding power conversion systems.
INFINEON IGLD60R190D1AUMA1 Power Transistor Specifications:
Drain Source Voltage: 600 V
Pulsed Drain Current: 23 A
Continuous Drain Current: 10 A
Gate Threshold Voltage: 0.9V to 1.2V
Gate Resistance: 0.27 Ω
Output Capacitance (Coss): 28 pF
Input Capacitance (Ciss): 157 pF
Reverse Recovery Charge: 0 NC
Maximum Operating Temperature: -55°C to 150°C
Thermal Resistance, junction-case: 2 °C/W
Reflow Soldering Temperature: 245 °C
Switching Surge Voltage: 750 V
Power Dissipation: 62.5 W
Buy the Buy Infineon CoolGaN Enhancement Mode Power Transistor Part Number IGLD60R190D1 Online
Enhance your power systems with the IGLD60R190D1, a high-performance 600V CoolGaN power transistor. Featuring ultra-fast switching, low gate charge, and rugged design, it is optimized for efficient SMPS and high-density chargers. Its suitability for half-bridge topologies like PFC, LLC, and flyback enhances system efficiency, reduces EMI, and allows higher frequency operation, making it an excellent choice for demanding industrial and consumer electronics. Buy online today and ensure reliable, high-performance power conversion in your applications.
Buy Infineon IGLD60R190D1 now and experience unmatched reliability, high efficiency, and fast switching capabilities for your industrial power applications.
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