The IRFHS8242PbF is a HEXFET Power MOSFET designed for high efficiency switching applications. It features a drain-to-source voltage of 25 V, low Rds(on) of 13.0 mΩ at Vgs = 10V, and a pulsed drain current of 850A. Its compact PQFN 2x2 package offers excellent thermal performance with a power dissipation of 24W at 25°C. Ideal for load switching, it boasts low gate charge of 43 nC, fast switching times, and reliable thermal characteristics, making it suitable for power management and motor control circuits.
INFINEON IRFHS8242TRPBF HEXFET Power MOSFET Specifications:
Drain-to-Source Voltage: 25 V
Gate-to-Source Voltage: +20 V
Continuous Drain Current at 25°C: 9.90 A
Continuous Drain Current at 70°C: 8.0 A
Pulsed Drain Current: 850 A
Power Dissipation: 24 W at 25°C
Operating Junction Temperature Range: -55 to +150°C
Storage Temperature Range: -55 to +150°C
Rds(on): 13.0 mΩ (at Vgs = 10V)
Gate Threshold Voltage: 1.95 V to 2.35 V
Gate Charge: 43 nC (at Vos = 4.5V)
Output Capacitance: 171 pF
Input Capacitance: 63 pF
Reverse Transfer Capacitance: 73 pF
Thermal Resistance Junction to Case (Bottom): Specified on datasheet
Buy the International Series HEXFET Load Switch: IRFHS8242PbF
Order the HEXFET Power MOSFET IRFHS8242PbF online today to benefit from its low Rds(on), high pulsed current capacity, and compact PQFN 2x2 package. Ideal for efficient load switching, power supply circuits, and motor control systems. Its fast switching times and thermal efficiency ensure optimal performance in demanding applications. Featuring a drain-to-source voltage of 25V, low gate charge, and superb thermal characteristics, this MOSFET integrates seamlessly into your power management solutions. Purchase now for reliable, high-performance operation.
Buy International HEXFET Power MOSFET IRFHS8242PbF now and experience unmatched reliability and performance in load switching and power management.
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