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INFINEON IMBG120R090M1HXTMA1 Silicon Carbide Power MOSFET

The CoolSic 1200V SiC Trench MOSFET offers high efficiency, robust switching performance, and excellent thermal management for industrial power applications. Featuring .XT interconnection technology, it provides very low switching losses, high current handling up to 26A, and short circuit withstand time of 3 microseconds. Its robust body diode, benchmark gate threshold voltage, and fully controllable dv/dt make it ideal for drives, energy generation, and industrial power supplies. Suitable for high-frequency, high-density systems, it ensures reliability and system efficiency in demanding environments.

Authorized Distributors
Source:DigiKey
Part No:IMBG120R090M1HXTMA1
Stock:2433
Inv Date:05-29-2026
Price: Unit price: $10.06
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Part No:IMBG120R090M1HXTMA1
Stock:934
Inv Date:05-30-2026
Price: Unit price: $8.07
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Part No:IMBG120R090M1HXTMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $3.62
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Part No:IMBG120R090M1HXTMA1
Stock:52
Inv Date:05-30-2026
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INFINEON IMBG120R090M1HXTMA1 Silicon Carbide Power MOSFET Specifications:

  • Drain-source voltage: 1200 V
  • Continuous drain current: 26 A at 25°C, 18 A at 100°C
  • Pulsed drain current: 65 A
  • Drain-source on-state resistance: 90-125 mΩ
  • Body diode forward voltage: 4.1 - 5.2 V
  • Gate-source voltage: Recommended 15-18 V, maximum ±23 V
  • Maximum short-circuit withstand time: 3 microseconds
  • Power dissipation: 136 W at 25°C, 68 W at 100°C
  • Junction temperature: -55°C to 175°C
  • Storage temperature: -55°C to 150°C
  • Reflow soldering temperature: 260°C
  • Thermal resistance, junction-case: 0.82-11 K/W
  • Thermal resistance, junction-ambient: 62 K/W
  • Repetitive avalanche current: 65 A
  • Operating frequency: High-frequency capable

Buy the Infineon IMBG120R0O90M1H – Reliable SiC Trench MOSFET for Industrial Applications

Order the Infineon IMBG120R0O90M1H online now to enhance your industrial power systems. This SiC trench MOSFET is engineered for high efficiency, robust performance, and thermal stability, making it ideal for drives, solar inverters, and industrial UPS. With low switching losses and a short circuit withstand time of 3 microseconds, it ensures system reliability and high power density. Benefit from quick delivery, competitive pricing, and trusted quality — perfect for demanding industrial applications requiring durable, high-performance semiconductor components.

Get Infineon IMBG120R0O90M1H today—optimized for high power density and short circuit resilience in demanding industrial power systems.

Frequently Asked Questions

Where can I buy INFINEON IMBG120R090M1HXTMA1?

You can click on the BUY or RFQ button to purchase IMBG120R090M1HXTMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IMBG120R090M1HXTMA1?

You can download the IMBG120R090M1HXTMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IMBG120R090M1HXTMA1?

INFINEON

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