The IRFI530NPBF is a fifth-generation HEXFET power MOSFET offering low on-resistance, high voltage isolation up to 2.5KVRMS, and fully avalanche rated performance. Its advanced process technology ensures fast switching and rugged operation, suitable for industrial and commercial applications. The TO-220 Fullpak package provides high isolation comparable to a 100-micron mica barrier, with low thermal resistance. This lead-free device features a drain-source voltage of 100V, continuous drain current of 12A at 25°C, and a power dissipation of 4W, making it ideal for efficient power switching and regulation circuits.
INFINEON IRFI530NPBF High-Voltage Power MOSFET Specifications:
Drain-Source Voltage: 100 V
Continuous Drain Current (25°C): 12 A
Power Dissipation: 4 W
Thermal Resistance Junction-to-Case: 37°C/W
Thermal Resistance Junction-to-Ambient: 65°C/W
Gate-to-Source Voltage: ±20 V
Single Pulse Avalanche Energy: 150 mJ
Repetitive Avalanche Current: 44 mJ
Operating Junction Temperature Range: -55°C to +175°C
Soldering Temperature (10 sec): 300°C
Isolation Voltage (High Voltage Isolation): 2.5KVRMS
Casing: TO-220 Fullpak
Leakage Current (Drain-Source): 7 A
Gate Charge (Total): 44 nC
Gate-to-Source Charge: 62 nC
Turn-On Delay Time: 64 ns
Fall Time: 25 ns
Buy the International Series HEXFET Power MOSFET: IRFI530NPBF
Purchase the International IRFI530NPBF high-voltage HEXFET power MOSFET online today for efficient power switching. With advanced process technology, low on-resistance, and an isolated TO-220 Fullpak package, this lead-free device delivers 100V drain-source voltage, 12A continuous drain current, and 4W power dissipation. The device's rugged design ensures durability and fast switching, ideal for industrial, automation, and power regulation applications. Order now for proven performance and quick delivery.
Buy International IRFI530NPBF now and experience unmatched reliability and performance in high-voltage power switching applications.
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