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INFINEON IMBG120R220M1HXTMA1 Silicon Carbide MOSFET

This high-performance SiC trench MOSFET offers 1200V blocking voltage, low on-resistance, and excellent switching efficiency. Ideal for industrial drives, renewable energy, and power supplies, it incorporates Infineon’s CoolSic™ technology for optimal thermal performance and robustness. The device features a fully controllable gate, robust body diode for hard commutation, and optimized switching with Sense pin technology. Suitable for high-frequency applications, it enhances system power density, reduces cooling requirements, and minimizes system complexity. Qualified for industrial use, it ensures reliability in demanding power management environments.

Authorized Distributors
Source:Newark
Part No:IMBG120R220M1HXTMA1
Stock:26
Inv Date:05-29-2026
Price: Unit price: $1.88
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Source:DigiKey
Part No:IMBG120R220M1HXTMA1
Stock:761
Inv Date:05-29-2026
Price: Unit price: $7.56
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Part No:IMBG120R220M1HXTMA1
Stock:0
Inv Date:05-30-2026
Price: Unit price: $6.47
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Part No:IMBG120R220M1HXTMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $2.54
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Part No:IMBG120R220M1HXTMA1
Stock:890
Inv Date:05-30-2026
Price: N/A
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INFINEON IMBG120R220M1HXTMA1 Silicon Carbide MOSFET Specifications:

  • Drain-source voltage: 1200V
  • Drain current: 13A (Tc=25°C), 9.1A (Tc=100°C), pulsed 33A
  • Gate-source voltage: recommended +15V to +18V, max ±23V
  • Body diode forward voltage: 4.1V at 25°C, 4.0V at 100°C, 3.9V at 175°C
  • Thermal resistance junction-case: 1.4–1.8 K/W, junction-ambient: 62 K/W
  • Power dissipation: 83W at 25°C, 42W at 100°C
  • Operating temperature: -55°C to 175°C, storage -55°C to 150°C
  • Reflow soldering temperature: 260°C, package creepage > 6.1mm
  • Switching energy: 58 nJ (typical), reverse recovery charge: 75-94 nC
  • Switching times: turn-on delay 6.5 ns, rise time 11 ns, fall time 16 ns
  • Gate charge: 9.4 nC, input capacitance: 312 pF, output capacitance: 14 pF
  • Body diode forward current: 14A at 25°C, pulsed 33A

Buy the Infineon IMBG120R220M1H – Reliable SiC Trench MOSFET for Industrial Applications

Purchase the Infineon IMBG120R220M1H online today to benefit from its high-voltage capacity, low on-resistance, and exceptional thermal performance. Designed for industrial, renewable energy, and high-frequency power supply applications, this SiC MOSFET enhances system efficiency and reduces cooling needs. Its robust construction, full controllability, and qualified industrial standards ensure reliable operation under demanding conditions. Easy ordering and fast delivery make it the optimal choice for engineers seeking advanced power semiconductor solutions with proven durability and performance.

Buy Infineon IMBG120R220M1H now and experience unmatched reliability and high-efficiency performance in power management systems.

Frequently Asked Questions

Where can I buy INFINEON IMBG120R220M1HXTMA1?

You can click on the BUY or RFQ button to purchase IMBG120R220M1HXTMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IMBG120R220M1HXTMA1?

You can download the IMBG120R220M1HXTMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IMBG120R220M1HXTMA1?

INFINEON

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