This high-performance SiC trench MOSFET offers 1200V blocking voltage, low on-resistance, and excellent switching efficiency. Ideal for industrial drives, renewable energy, and power supplies, it incorporates Infineon’s CoolSic™ technology for optimal thermal performance and robustness. The device features a fully controllable gate, robust body diode for hard commutation, and optimized switching with Sense pin technology. Suitable for high-frequency applications, it enhances system power density, reduces cooling requirements, and minimizes system complexity. Qualified for industrial use, it ensures reliability in demanding power management environments.
Body diode forward current: 14A at 25°C, pulsed 33A
Buy the Infineon IMBG120R220M1H – Reliable SiC Trench MOSFET for Industrial Applications
Purchase the Infineon IMBG120R220M1H online today to benefit from its high-voltage capacity, low on-resistance, and exceptional thermal performance. Designed for industrial, renewable energy, and high-frequency power supply applications, this SiC MOSFET enhances system efficiency and reduces cooling needs. Its robust construction, full controllability, and qualified industrial standards ensure reliable operation under demanding conditions. Easy ordering and fast delivery make it the optimal choice for engineers seeking advanced power semiconductor solutions with proven durability and performance.
Buy Infineon IMBG120R220M1H now and experience unmatched reliability and high-efficiency performance in power management systems.
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