The OptiMOS™5 Power-Transistor operating at 150 V is designed for high-frequency switching and synchronous rectification, featuring very low on-resistance and reverse recovery charge. Its robust construction supports high pulsed drain currents of up to 448 A and continuous drain currents of 112 A, with excellent thermal management and stability at operating temperatures from -55°C to 175°C. The device comes with Pb-free plating and RoHS compliance, making it ideal for power supplies, motor drives, and advanced electronics requiring reliable, high-performance switching capabilities.
INFINEON IPI076N15N5AKSA1 Power Transistor Specifications:
Drain-source voltage: 150 V
Continuous drain current: 112 A at 25°C
Pulsed drain current: 448 A at 25°C
Gate threshold voltage: 3.0 - 4.6 V
On-resistance (Rds(on)): 64 - 84 mΩ at Vgs=8 V
Gate charge: 49 - 61 nC
Power dissipation: 214 W at 25°C
Operating temperature: -55°C to 175°C
Thermal resistance junction-to-ambient: 62 kW
Avalanche energy: 130 mJ
Reverse recovery charge: 96 - 192 nC
Rev. 2.0, March 3, 2016
Buy the Infineon Series OptiMOS™5 Power-Transistor: 150 V
Enhance your power electronics with the high-performance Infineon OptiMOS™5 Power-Transistor operating at 150 V. Designed for high-frequency switching and synchronous rectification, it features very low on-resistance, excellent thermal stability, and robust current handling capabilities up to 112 A continuous and 448 A pulsed. Its RoHS compliant, Pb-free design ensures environmental safety for demanding industrial, automotive, and aerospace applications. Reliable, efficient, and quality assured, this device is essential for advanced power management systems seeking high efficiency and durability.
Buy Infineon OptiMOS™5 Power-Transistor now and experience unmatched reliability and high-frequency switching efficiency.
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