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INFINEON IRFB52N15DPBF Power MOSFET

The IRFB52N15DPBF is a HEXFET® single N-channel power MOSFET designed for high-frequency power switching applications such as DC-DC converters and plasma displays. It features fully characterized capacitance, including effective output capacitance (COSS), to facilitate simplified circuit design. The device offers robust avalanche voltage and current ratings, low gate-to-drain charge for reduced switching losses, and a maximum continuous drain current of 51A at 25°C. Its reliable performance and thermal properties make it ideal for power management, consumer electronics, and industrial applications. Lead times may vary due to high demand, and product availability is subject to fluctuations.

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Source:Newark
Part No:IRFB52N15DPBF
Stock:4674
Inv Date:05-29-2026
Price: Unit price: $1.09
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Source:DigiKey
Part No:IRFB52N15DPBF
Stock:9329
Inv Date:05-29-2026
Price: Unit price: $4.75
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Part No:IRFB52N15DPBF
Stock:1582
Inv Date:05-30-2026
Price: Unit price: $3.82
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Part No:IRFB52N15DPBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $2.61
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Part No:IRFB52N15DPBF
Stock:100
Inv Date:05-29-2026
Price: Unit price: $1.39
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Source:Arrow EU
Part No:IRFB52N15DPBF
Stock:7451
Inv Date:05-30-2026
Price: N/A
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Part No:IRFB52N15DPBF
Stock:183
Inv Date:05-30-2026
Price: N/A
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INFINEON IRFB52N15DPBF Power MOSFET Specifications:

  • Drain-to-Source Breakdown Voltage: 150 V
  • Gate-to-Source Voltage: +30 V
  • Continuous Drain Current at 25°C: 51 A
  • Continuous Drain Current at 100°C: 36 A
  • Pulsed Drain Current: 240 A
  • Power Dissipation at 25°C: 38 W
  • Thermal Resistance Junction-to-Ambient: 62°C/W
  • Thermal Resistance Case-to-Sink: 0.50°C/W
  • Maximum Operating Junction Temperature: 175°C
  • Storage Temperature Range: -55°C to +175°C
  • Peak Diode Recovery dv/dt: 5.5 V/ns
  • Avalanche Energy Single Pulse: 470 mJ
  • Avalanche Voltage Repetitive: 200 V
  • Diode Forward Voltage: 1.5 V at 36A
  • Reverse Recovery Time: 140-210 ns
  • Gate Charge Total: 60-89 nC
  • Output Capacitance (Coss): 590 pF
  • Input Capacitance (Ciss): 2770 pF
  • Reverse Transfer Capacitance (Crss): 110 pF
  • Main Application: Power management, high-frequency switching, consumer electronics

Buy the Buy International HEXFET Power MOSFET Part Number IRFB52N15DPBF Online

Order the IRFB52N15DPBF today online for high-performance power management in electronic devices. This N-channel HEXFET features low gate charge, robust avalanche ratings, and fully characterized capacitance, making it ideal for high-frequency switching applications such as DC-DC converters and plasma panels. Its excellent thermal properties ensure reliable operation under demanding conditions, while fast switching capabilities minimize energy losses. Ideal for industrial, consumer electronics, and power supply systems—secure your supply of this durable and efficient MOSFET now for optimal circuit performance.

Get IRFB52N15DPBF today—built for high-frequency power switching, featuring characterized capacitance and avalanche ratings for reliable performance.

Frequently Asked Questions

Where can I buy INFINEON IRFB52N15DPBF?

You can click on the BUY or RFQ button to purchase IRFB52N15DPBF from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IRFB52N15DPBF?

You can download the IRFB52N15DPBF datasheet or visit the INFINEON website for support.

Who is the manufacturer of IRFB52N15DPBF?

INFINEON

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