The IRF7455PbF is a HEXFET Power MOSFET designed for high-frequency DC-DC converters and synchronous rectification applications. Featuring ultra-low Rds(on) at 4.5V, low gate charge, and low impedance, it reduces switching losses and ensures reliable avalanche voltage and current performance. Encased in an SO-8 package, it offers a drain-source voltage of 30V and continuous drain current up to 15A at 25°C. The MOSFET is lead-free, optimized for efficient power management, low thermal resistance, and operation across a junction temperature range from -55°C to +150°C.
INFINEON IRF7455TRPBF Power MOSFET Specifications:
Drain-Source Voltage: 30 V
Continuous Drain Current: 15 A at 25°C, 12 A at 70°C
Pulsed Drain Current: 120 A
Maximum Power Dissipation: 25 W at 25°C, 1.6 W at 70°C
Junction and Storage Temperature Range: -55°C to +150°C
Maximum Junction-to-Ambient Resistance: 50 °C/W
Static Drain-to-Source On-Resistance: 0.0069 to 0.009 Ω
Gate Threshold Voltage: 0.6 V to 2.0 V
Reverse Transfer Capacitance: 100 pF
Single Pulse Avalanche Energy: 200 mJ
Gate-to-Source Forward Leakage: 200 μA at 12 V
Body Diode Forward Voltage: 1.2 V at 2.5A
Package: SO-8 lead-free
Thermal Resistance: Junction-to-Ambient 50 °C/W
Voltage Rating: 30 V
Lead-Free Construction: Yes
Buy the Buy International IRF7455PbF Power MOSFET Part Number IRF7455PbF Online
Order the IRF7455PbF Power MOSFET online today for superior performance in high-frequency DC-DC converters and synchronous rectification. This lead-free HEXFET features ultra-low Rds(on), low gate charge, and high current capacity, ensuring efficient switching with minimal power loss. Its robust SO-8 package supports operation across a broad temperature range, providing reliable thermal management. Perfect for applications demanding high efficiency, fast switching, and durable power handling, the IRF7455PbF is your ideal choice for modern power electronics needs. Buy now to enhance your projects and improve system reliability.
Get International IRF7455PbF high-performance MOSFET today—optimized for high-frequency switching, efficiency, and long-lasting durability.
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