This digital audio MOSFET half-bridge device is designed for Class D audio amplifier applications, featuring low on-resistance, optimized gate charge, and body diode recovery. It provides up to 150W per channel in a robust, lead-free, integrated package, facilitating efficient PCB layout and improved THD and EMI performance. The device's design enhances efficiency and reliability in audio amplification systems, making it ideal for compact, high-power audio applications. Its optimized parameters ensure excellent switching characteristics, high current handling, and thermal stability suitable for demanding audio hardware environments.
Purchase the International IRFI4212H-117P digital audio MOSFET half-bridge online today for your high-performance audio amplifier designs. This device offers up to 150W per channel, optimized gate charge, low on-resistance, and excellent thermal stability, making it ideal for robust, energy-efficient Class D audio applications. With a lead-free, integrated package designed for easy PCB layout, this component enhances system efficiency, reduces THD and EMI, and provides reliable operation across a wide temperature range. It's the perfect choice for demanding audio equipment manufacturers seeking quality and durability.
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You can download the IRFI4212H117PXKMA1 datasheet or visit the INFINEON website for support.
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